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SeCoS |
N-Channel Super Junction Power MOSFET Advanced Super Junction Technology Super Low Gate Charge Green Device Available MARKING 24N60H = Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch ORDER INFORMATION Part Number Type SSU24N60H-C Lead (P |
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SeCoS |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS and 100% Rg Guaranteed Green Device Available TO-263 MARKING 40N01 Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size |
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SeCoS |
N-Channel Super Junction Power MOSFET Advanced Super Junction Technology Super Low Gate Charge Green Device Available MARKING 12N70H = Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch ORDER INFORMATION Part Number Type SSU12N70H-C Lead (Pb |
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SeCoS |
N-Channel MOSFET High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 89N10S Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch ORDER INFORMATION Part Number Type SSU89N10S-C Lead (Pb)-free and Halogen-fre |
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SeCoS |
P-Channel Enhancement Mode Power MOSFET High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 40P06 = Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch ORDER INFORMATION Part Number Type SSU40P06-C Lead (Pb)-free an |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Drain Date Code Millimeter Min. Max. 4.00 4.85 0.68 1.00 0.00 0.30 0.36 0.53 1.50 REF 2.29 |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain REF. A b L4 C L3 L1 E Millimeter Min. Max. 4.00 4.85 0.51 1.00 0.00 0.30 0.30 0.74 1.50 REF 1.78 2. |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS and 100% Rg Guaranteed Green Device Available TO-263 MARKING 50N10 Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 |
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SeCoS |
N-Channel MOSFET High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 102N08S Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch ORDER INFORMATION Part Number Type SSU102N08S-C Lead (Pb)-free and Halogen-f |
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SeCoS |
N-Channel Shielded Gate Trench Power MOSFET Shielded Gate Trench Technology Super Low Gate Charge Green Device Available MARKING 56N03S =Date Code TO-263 PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch ORDER INFORMATION Part Number Type SSU56N03S-C Lea |
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SeCoS |
N-Channel Shielded Gate Trench Power MOSFET Shielded Gate Trench Technology Super Low Gate Charge Green Device Available MARKING 130N06SV =Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch ORDER INFORMATION Part Number Type SSU130N06SV-C Lead (Pb)-free and Ha |
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SeCoS |
N-Ch Enhancement Mode Power MOSFET High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 130N06S Date Code PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch ORDER INFORMATION Part Number Type SSU130N06S-C Lead (Pb)-free and Halogen-f |
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Desde 2024. D4U Semiconductor.
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