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NPN-PNP Silicon Multi-Chip Transistor SOT-363 Power dissipation PCM : 0.2 W (Tamp.= 25 OC) Collector current ICM : 0.2/-0.2 A Collector-base voltage V(BR)CBO : 75/-60 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150OC .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF ( |
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PNP Silicon Multi-Chip Transistor RoHS Compliant Product $VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH Power dissipation. PCM : 0.2 W (Tamp.=25OC) Collector current ICM : - 0.2 A Collector -base voltage V(BR) CBO : - 40 V Operating & storage junction temperature Tj, Tstg : -55OC ~ |
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PNP Silicon Multi-Chip Transistor Power dissipation. PCM : 0.2 W (Temp.=25OC) Collector current ICM : - 0.6 A Collector -base voltage V(BR) CBO : - 40 V Operating & storage junction temperature Tj, Tstg : -55OC ~ +150OC C2 B1 E1 E2 B2 C1 Marking : K2T .055(1.40) .047(1.20) .026TYP |
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NPN / PNP Multi-Chip Transistor Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching SOT-363 A E L .B MARKING 46 FC DG K H J PACKAGE INFORMATION Package MPQ SOT-363 3K Leader Size |
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NPN Silicon Multi-Chip Transistor Power dissipation PCM : 0.15 W (Tamp.= 25O C) .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) Collector current ICM : 0.6 A Collector-base voltage V(BR)CBO : 75 V C 1 B2 E2 .014(0.3 |
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NPN General Purpose Transistor Power Dissipation PCM: 200mW (Ta=25°C) Collector Current ICM: 200mA Collector – Base Voltage V(BR)CBO: 60V MARKING K6N MA PACKAGING DIMENSION Package MPQ SOT-363 3K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwi |
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DUAL NPN TRANSISTOR Epitaxial Planar Die Construction Ideal for Low Power amplification and Switching SOT-563 A MARKING KAP PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Co |
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NPN+NPN Dual-Chip Plastic Encapsulated Transistor z Small package (dual type) z High voltage and high current z High hFE, Excellent hFE linearity SOT-353 A E L 1 B PACKAGING INFORMATION Weight: 0.0081g (approximate) F DG H CK J MARKING CODE LY LGR 54 Q1 Q2 123 REF. A B C D E F Millimeter |
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Surface Mount Switching Diode A suffix of "-C" specifies halogen & lead-free . Fast Switching Speed . For General Purpose Switching Application . Surface Mount Package Ideally Suited for Automatic Insertion MECHANICAL DATA . Case: SOD-323L, Molded Plastic . Polarity: See Diagr |
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NPN Plastic-Encapsulate Multi-Chip Transistor Power Dissipation. PCM : 0.2 W (Temp.=25OC) Collector Current ICM : 0.6 A Collector-Base vVoltage V(BR) CBO : 60 V Operating & Storage Junction Temperature Tj,T stg : -55OC ~ +150OC C2 B1 E1 E2 B2 C1 Marking : K2X .055(1.40) .047(1.20) .026TYP (0. |
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NPN - PNP Plastic-Encapsulated Transistors z Complementary Pair z Epitaxial Planar Die Construction z Ideal for Low Power Amplification and Switching MARKING K13 EQUIVALENT CIRCUIT .055(1.40) .047(1.20) SOT-363 .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) . |
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Plastic-Encapsulated Transistor (Dual) DUAL TRANSISTOR (NPN+PNP) Epitaxial Planar Die Construction Ideal for low Power Amplification and Switching One 5551(NPN), one 5401(PNP) MARKING : KNM SOT-363 A E L B F CH DG K J EQUIVALENT CIRCUIT REF. A B C D E F Millimeter Min. Max. 2.00 2.15 |
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Plastic-Encapsulate Multi-Chip (PNP+PNP) Transistor * Epitaxial Planar Die Construction * Complementary NPN Type Available (MMDT5551) .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) C2 B1 E1 E2 B2 C1 .014(0.35) .006(0.15) .087(2.20) . |
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PNP Silicon Multi-Chip Transistor RoHS Compliant Product A suffix of "-C" specifies halogen-free Power dissipation PCM : 0.15 W (Tamp.= 25OC) Collector current ICM : -0.6 A Collector-base voltage V(BR)CBO : -60 V Operating & Storage junction Temperature Tj, Tstg : -55OC~ +150OC C2 |
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Surface Mount Small Signal Schottky Barrier Rectifier Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, high efficiency Plastic package has underwriters laboratory flammability Classification 94V-0 APPLICATION Switching mode power supply applications P |
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Surface Mount Schottky Barrier Rectifiers Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability Classification 94V-0 BC A G F A |
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Surface Mount Schottky Barrier Rectifiers Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability Classification 94V-0 BC A G F A |
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Desde 2024. D4U Semiconductor.
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