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SeCoS Halbleitertechnologie |
N-Channel MOSFET Simple Drive Requirement Small Package Outline K E L D F G H J MARKING 3055L = Date code REF. A B C D E F Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Simple Drive Requirement Smaller Outline Package Surface mount package E REF. H A C B J K G Millimeter Min. Max. 0.37 REF. 0.30 0.55 0.12 REF. 0.10 L Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.20 REF. 1.40 1.80 0.95 REF. 0.60 REF. REF. G H J K L |
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SeCoS Halbleitertechnologie |
800mA 20V Dual N-Channel MOSFET bol VDS VGS TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C ID PD ID PD IDM RθJL TJ, TSTG Rating 10S 20 ±6 0.88 0.71 0.37 0.23 0.76 0.6 0.27 0.17 1.4 260 -55~150 0.8 0.64 0.3 0.19 0.69 0.55 0.22 0.14 Steady State Uni |
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SeCoS Halbleitertechnologie |
N-channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch Miniature SOT-323 surface mount package saves board space. K 1 E D F G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.1 1.4 0.80 1.10 1.20 1.40 0.15 0.40 H |
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SeCoS Halbleitertechnologie GmbH |
40W Transient Voltage Suppressor Diode Response time is typically < 1 ns Low leakage Stand-off voltage: 3.3 V ESD rating of class 3 (> 15 kV) per human body model IEC61000-4-2 level 4 ESD protection D G REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0 |
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SeCoS Halbleitertechnologie GmbH |
Enhancement Mode Power MOSFET * Simple Drive Requirement * Lower On-resistance D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.75 Dimensions in millimeters * Fast Switching Performance Date Code D2 4565SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drai |
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SeCoS Halbleitertechnologie GmbH |
P-Channel Enhancement Mode Power Mos.FET www.DataSheet4U.com * Simple Drive Requirement * Fast Switching Characteristic * Lower On-Resistance D REF. A C D E I H Date Code 9 5 6 3 G G D S Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 |
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SeCoS Halbleitertechnologie |
1.55A CMOS Low Dropout Voltage Regulator * Low Temperature Coefficient * Over-Temperature Shutdown * Adjustable Version * Very Low Dropout Voltage * High Accurate ± 1.5% * Guaranteed 1.55A output * Current Limiting * Power-Saving Shutdown Mode REF. A B C D E F Min. 5.80 4.80 3.80 0 0.40 |
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SeCoS Halbleitertechnologie |
Positive Voltage Regulator * Low Temperature Coefficient * Over-Temperature Shutdown REF. A B C D E F * User Adjustable Output Voltages * Very Low Dropout Voltage * Accurate to within 1.5% * Guaranteed 600mA output * Current Limiting * Power-Saving Shutdown Mode * Short Circu |
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SeCoS Halbleitertechnologie |
240W Transient voltage suppressors Diode M Z O Q R _ & N q & P G Z W W & r & s t & B A & ^ uv & L H M & w x XZ R & y N z Y & XN z H G ; < =@A B C C C D E D F & G H I H G & E & =JK& L M N O H P O Q N R '4567849: ÏÐÑÒÓÔÕÖ ×ÐØÙ ()*+, -./ 0123 >? Ë È Ú Ê Ë È Ë Í Ë È Î Ê Ë È Ë Í Ë È Ç Ê Ë È |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. SOP-8 B L D M APPLICATIONS White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits A C N J K PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leade |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET θ e E Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology A d b g APPLICATION DC-DC converters and p |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 |
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SeCoS Halbleitertechnologie |
N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0. |
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SeCoS Halbleitertechnologie |
N-Channel Enhancement Mode Power MOSFET Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. M F I H 2 Drain Q Q N 1 2 3 REF. A B C D E F G H Mi |
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SeCoS Halbleitertechnologie |
N Channel MOSFET Low on-resistance Fast switching speed Drive circuits can be simple Parallel use is easy Low voltage drive makes this device ideal for portable equipment SOT-723 1 GATE 2 SOURCE 3 DRAIN APPLICATION Interfacing Switching MARKING REF. KN PACKAGE I |
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SeCoS Halbleitertechnologie GmbH |
40W Transient Voltage Suppressor Diode Response time is typically < 1 ns Low leakage Stand-off voltage:3.3 V ESD rating of class 3 (> 15 kV) per human body model IEC61000-4-2 level 4 ESD protection D G REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF |
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SeCoS Halbleitertechnologie GmbH |
Enhancement Mode Power MOSFET * Simple Drive Requirement * Lower On-resistance D1 8 D1 7 D2 6 D2 5 Dimensions in millimeters D1 D2 * Fast Switching Performance Date Code 4575SS G1 S1 G2 1 S1 2 G1 3 S2 4 G2 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage www. |
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SeCoS Halbleitertechnologie |
CMOS Low Dropout Voltage Regulat * Low Temperature Coefficient * Over-Temperature Shutdown REF. A B C D E F Min. 5.80 4.80 3.80 0 0.40 0.19 Millimeter Max. 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Min. Millimeter Max. * Highly Accurate ± 1.5% * Very Low Dropout Voltage * N |
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SeCoS Halbleitertechnologie |
Positive Voltage Regulator * Low Temperature Coefficient * Over-Temperature Shutdown REF. A B C D E F Min. 5.80 4.80 3.80 0 0.40 0.19 Millimeter Max. 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Min. Millimeter Max. * Power Good Output Function * Very Low Dropout Voltage |
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Desde 2024. D4U Semiconductor.
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