SeCoS Halbleitertechnologie SF Hoja de datos

No.	parte #	Fabricante	Descripción
1	SSM3055L	SeCoS Halbleitertechnologie	N-Channel MOSFET Simple Drive Requirement Small Package Outline K E L D F G H J MARKING 3055L = Date code REF. A B C D E F Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35
2	SST4443	SeCoS Halbleitertechnologie	N-Channel MOSFET Simple Drive Requirement Smaller Outline Package Surface mount package E REF. H A C B J K G Millimeter Min. Max. 0.37 REF. 0.30 0.55 0.12 REF. 0.10 L Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.20 REF. 1.40 1.80 0.95 REF. 0.60 REF. REF. G H J K L
3	SSI2154	SeCoS Halbleitertechnologie	800mA 20V Dual N-Channel MOSFET bol VDS VGS TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C ID PD ID PD IDM RθJL TJ, TSTG Rating 10S 20 ±6 0.88 0.71 0.37 0.23 0.76 0.6 0.27 0.17 1.4 260 -55~150 0.8 0.64 0.3 0.19 0.69 0.55 0.22 0.14 Steady State Uni
4	STT2603	SeCoS Halbleitertechnologie GmbH	P-Channel Enhancement Mode Power MosFET * Small package outline * Simple drive requirement D D 6 D 5 S 4 REF. A A1 A2 c D E E1 G Date Code 1 D 2603 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min.
5	STT2605	SeCoS Halbleitertechnologie GmbH	P-Channel Enhancement Mode Power MosFET * Fast Switching Characteristic * Lower Gate Charge * Small Footprint & Low Profile Package D D 5 S 4 D 6 Date Code 2605 REF. A A1 A2 c D E E1 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.Da
6	SF08E60D1	SeCoS Halbleitertechnologie	Voltage 600V 8 Amp Super Fast Rectifier Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability A B TO-252 C D MECHANICAL DATA Case: Molded plastic Plastic Materials used Carries Underwriters Laborator
7	SSF1320N	SeCoS Halbleitertechnologie	N-channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch Miniature SOT-323 surface mount package saves board space. K 1 E D F G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.1 1.4 0.80 1.10 1.20 1.40 0.15 0.40 H
8	SSN3541	SeCoS Halbleitertechnologie	N Channel MOSFET Low on-resistance Fast switching speed Drive circuits can be simple Parallel use is easy Low voltage drive makes this device ideal for portable equipment SOT-723 1 GATE 2 SOURCE 3 DRAIN APPLICATION Interfacing Switching MARKING REF. KN PACKAGE I
9	SSG4565	SeCoS Halbleitertechnologie GmbH	Enhancement Mode Power MOSFET * Simple Drive Requirement * Lower On-resistance D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.75 Dimensions in millimeters * Fast Switching Performance Date Code D2 4565SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drai
10	SMS2020	SeCoS Halbleitertechnologie	N-Channel MOSFET e Gate – Source Voltage Continuous Drain Current 1 Power Dissipation 1 Continuous Drain Current 2 Power Dissipation 2 Pulsed Drain Current 3 Maximum Junction-to-Lead Operating Junction & Storage Temperature Range TA= 25°C TA= 70°C TA= 25°C TA= 70°C T
11	SSG9926N	SeCoS Halbleitertechnologie	N-Channel MOSFET Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. SOP-8 B L D M APPLICATIONS White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits A C N J K PACKAGE INFORMATION Package SOP-8 MPQ 2.5K Leade
12	SSN3043	SeCoS Halbleitertechnologie	N-Channel MOSFET Energy Efficient 1 GATE 2 SOURCE 3 DRAIN APPLICATION DC-DC converters, load switching, power management in portable and battery –powered products such as computers, printers, cellular and cordless telephones. REF. A B C D E Millimeter Min. Max. 1.15
13	SSPS7308NA	SeCoS Halbleitertechnologie	N-Channel MOSFET  θ e E    Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology A d b g APPLICATION DC-DC converters and p
14	SSRF02N65SL	SeCoS Halbleitertechnologie	N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10
15	SSRF04N65SL	SeCoS Halbleitertechnologie	N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 2 Drain M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10
16	SSRF06N60SL	SeCoS Halbleitertechnologie	N-Channel MOSFET Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.
17	SSE4N60	SeCoS Halbleitertechnologie	N-Channel Enhancement Mode Power MOSFET Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. M F I H 2 Drain Q Q N 1 2 3 REF. A B C D E F G H Mi
18	SUM1960NE	SeCoS Halbleitertechnologie	N-channel MOSFET Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-363 saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and
19	SUM2153	SeCoS Halbleitertechnologie	N-channel MOSFET TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C ID PD ID PD IDM TL TJ, TSTG Rating 10S 20 ±6 0.89 0.71 0.38 0.24 0.76 0.61 0.28 0.17 1.4 260 150, -55~150 0.81 0.64 0.31 0.2 0.69 0.55 0.23 0.15 Steady State Unit V V A W A W A ° C ° C Co
20	SSG4575	SeCoS Halbleitertechnologie GmbH	Enhancement Mode Power MOSFET * Simple Drive Requirement * Lower On-resistance D1 8 D1 7 D2 6 D2 5 Dimensions in millimeters D1 D2 * Fast Switching Performance Date Code 4575SS G1 S1 G2 1 S1 2 G1 3 S2 4 G2 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage www.