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SeCoS Halbleitertechnologie GmbH |
P-Channel Enhancement Mode Power MosFET * Small package outline * Simple drive requirement D D 6 D 5 S 4 REF. A A1 A2 c D E E1 G Date Code 1 D 2603 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. |
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SeCoS Halbleitertechnologie GmbH |
P-Channel Enhancement Mode Power MosFET * Fast Switching Characteristic * Lower Gate Charge * Small Footprint & Low Profile Package D D 5 S 4 D 6 Date Code 2605 REF. A A1 A2 c D E E1 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.Da |
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SeCoS Halbleitertechnologie GmbH |
(2SC1983L / 2SC1984L) NPN Silicon General Purpose Transistor Power dissipation 2.0 +0.3 –0.2 14 ±0. 2 1 0. 45 +0. –0.1 05 0.4 0 +0. –0. 05 PCM: Collector current ICM: 1 W (Tamb=25℃) 1 A 1.0±0.1 Collector-base voltage V(BR)CBO: 2SC1383L: 30 V 2SC1384L: 60 V Operating and storage junction temperature range T |
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SeCoS Halbleitertechnologie GmbH |
NPN Transistor 3 SOT-23 Collector 3 1 Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 Power dissipation PCM : 0.2 W Collector Current ICM : 0 |
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SeCoS Halbleitertechnologie GmbH |
40W Transient Voltage Suppressor Diode Response time is typically < 1 ns Low leakage Stand-off voltage: 3.3 V ESD rating of class 3 (> 15 kV) per human body model IEC61000-4-2 level 4 ESD protection D G REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0 |
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SeCoS Halbleitertechnologie GmbH |
Enhancement Mode Power MOSFET * Simple Drive Requirement * Lower On-resistance D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.75 Dimensions in millimeters * Fast Switching Performance Date Code D2 4565SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drai |
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SeCoS Halbleitertechnologie GmbH |
Voltage Regulator * Thermal Overload Protection * Floating Operation For High Voltage Applications * Short Circuit Protection * Output Voltage Adjustable From 1.25V To 37V * Output Transistor Save Area Compensation * Output Current In Excess Of 100mA REF. A C D E I H |
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SeCoS Halbleitertechnologie GmbH |
P-Channel Enhancement Mode Power Mos.FET www.DataSheet4U.com * Simple Drive Requirement * Fast Switching Characteristic * Lower On-Resistance D REF. A C D E I H Date Code 9 5 6 3 G G D S Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 |
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SeCoS Halbleitertechnologie GmbH |
NPN Transistor z Darlington connection for a high hFE z High input impedance MARKING：R1M Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 1.BASE |
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SeCoS Halbleitertechnologie GmbH |
40W Transient Voltage Suppressor Diode Response time is typically < 1 ns Low leakage Stand-off voltage:3.3 V ESD rating of class 3 (> 15 kV) per human body model IEC61000-4-2 level 4 ESD protection D G REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF |
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SeCoS Halbleitertechnologie GmbH |
Enhancement Mode Power MOSFET * Simple Drive Requirement * Lower On-resistance D1 8 D1 7 D2 6 D2 5 Dimensions in millimeters D1 D2 * Fast Switching Performance Date Code 4575SS G1 S1 G2 1 S1 2 G1 3 S2 4 G2 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage www. |
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SeCoS Halbleitertechnologie GmbH |
N-Channel Enhancement Mode Power MosFET * Low On-Resistance * Capable of 2.5V Gate Drive D D 5 S 4 6 D REF. A A1 A2 c D E E1 Date Code 2602 G 1 D 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. |
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SeCoS Halbleitertechnologie GmbH |
N-Channel Enhancement Mode Power MosFET * Lower Gate Charge * Fast Switching Characteristic * Small Footprint & Low Profile Package D D 5 S 4 D 6 REF. A A1 A2 c D E E1 Date Code 2604 G 1 D 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 |
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SeCoS Halbleitertechnologie GmbH |
N-Channel Enhancement Mode Power MosFET * RoHS Compliant * Low Gate Charge * Surface Mount Package D1 S1 5 D2 4 D1 D2 6 REF. A A1 A2 c D E E1 Date Code 2622 G1 G2 1 G1 2 S2 3 G2 S1 S2 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L |
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SeCoS Halbleitertechnologie GmbH |
Positive Voltage Regulator * Low Temperature Coefficient * Over-Temperature Shutdown * Adjustable Version * Very Low Dropout Voltage * Noise Reduction Bypass Capacitor * Short Circuit Current Fold-back * Guaranteed 750mA output * Current Limiting * Power-Saving Shutdown Mode |
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SeCoS Halbleitertechnologie GmbH |
Negative Voltage Regulator * Short Circuit Current Limiting * Output Current Up To 100mA * Thermal Overload Shutdown Protection Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 |
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SeCoS Halbleitertechnologie GmbH |
NPN Transistor Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 2 Emitter A 3 L 3 Collector 3 Top View 1 2 C B 1 2 K E D 1 MARKING R = hFE Coding Base F G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1 |
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SeCoS Halbleitertechnologie GmbH |
Digital Transistors NPN * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation making device design easy. * The bias resistors |
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SeCoS Halbleitertechnologie GmbH |
Digital Transistors NPN * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation making device design easy. * The bias resistors |
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SeCoS Halbleitertechnologie GmbH |
Digital Transistors NPN * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation making device design easy. * The bias resistors |
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Desde 2024. D4U Semiconductor.
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