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Medium Power Transistor * 1Amp Continuous Current * -60V VCEO * Complementary TO BCP194 2.COLLECTOR 3.EMITTER REF. A B C D E F Min. 4.4 4.05 1.50 1.30 2.40 0.89 Millimeter Max. 4.6 4.25 1.70 1.50 2.60 1.20 REF. G H I J K L M Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1. |
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SeCoS |
PNP Transistor For AF Driver and Output Stages High Collector Current Low Collector-Emitter Saturation Voltage PACKAGE INFORMATION Package MPQ SOT-223 2.5K Leader Size 13 inch SOT-223 A M Top View C B KL E 1 2 3 4 ORDER INFORMATION Part Number Type BC |
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SeCoS |
Epitaxial Planar Transistor The BCP1213 www.DataSheet4U.net is designed for using in power amplifier applications or power switching applications. SOT-89 A E C MARKING Type Name B D F G H K REF. G H J K L NY hFE Ranking REF. A B C D E F Millimeter J Min. Max. 4.40 4.60 |
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SeCoS |
Planar High Performance Transistor * 3 Amp Continuous Current * 60 Volt VCEO * Low Saturation Voltage REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.3 |
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SeCoS |
PNP Epitaxial Planar Transistor -60Volt VCEO 3 Amp continuous current Low saturation voltage PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch SOT-89 4 123 A EC Base BD F Collector Emitter G H J K L REF. A B C D E F Millimeter Min. 4.40 |
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NPN Epitaxial Planar Transistor V V A W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current |
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NPN Epitaxial Planar Transistor HARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter sa |
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Planar Medium Power Transistor * 1 Amp Continuous Current * 60 Volt VCEO * Complementary to BCP195 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0. |
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Epitaxial Planar Transistor 2 3 C Excellent DC Current Gain Characteristics Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC / IB=4A / 0.1A B F G H D CLASSIFICATION OF hFE (1) Product-Rank Range BCP2098-Q 120~270 BCP2098-R 180~390 REF. A B C D E F K J L Millime |
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NPN Epitaxial Silicon Transistor The BCP4672 www.DataSheet4U.net is designed for low frequency amplifier applications. SOT-89 4 MARKING 4672 A 1 2 3 C Date Code E B D F G H J K L CLASSIFICATION OF hFE Product Rank Range BCP4672-A 120~240 BCP4672-B 200~400 REF. PACK |
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NPN Silicon Medium Power Transistor Switching and amplification in high voltage Low current High voltage MARKING 1G6 PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch SOT-89 4 123 A EC B F G H J D K L REF. A B C D E F Millimeter Min. 4.40 3.94 1.40 2.25 |
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NPN Epitaxial Planar Transistor θJC Notes: 1. When mounted on Min. copper pad. 2. When mounted on FR-4 PCB with area measuring 15×15×1 mm. 40 SOT-89 123 A EC 4 D G H J Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.55 TYP. 0.89 1.20 K L REF. G H J K L Mi |
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NPN Silicon Medium Power Transistor For AF Driver and Output Stages High Collector Current Low Collector-Emitter Saturation Voltage Complementary Types:BCP53 (PNP) PACKAGE INFORMATION Package MPQ SOT-223 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type BCP56-16-C L |
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NPN Epitaxial Planar Transistor Low Collector Saturation Voltage High Break Down Voltage High Total Power Dissipation MARKING 1616A CLASSIFICATION OF hFE1 Rank L K Range 135~270 200~400 U 300~600 PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch ORDER INFO |
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NPN Transistor Small Flat Package Large Current Capacity High DC Current Gain APPLICATION LF Amplifiers, Various Drivers, Muting Circuit MARKING 3669 Date Code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch ORDER INFORMATION Part Number Ty |
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NPN Transistor Complementary to BCP3906 Low Current Low Voltage MARKING SOT-89 123 A EC 4 1A B D PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch 1 Base Collector 2 3 Emitter FG H J K L REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4 |
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PNP Silicon Medium Power Transistor Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) RoHS Compliant Product MARKING 559A Date code PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch SOT-89 4 123 A EC B F G H J D K L 1. Base 2. Collector 3. Emitter REF. |
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PNP Transistor Switching and amplification in high voltage Low current High voltage MARKING 5401 PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch Collector Base Emitter SOT-89 123 A EC 4 B F G H J D K L REF. A B C D E F Mi |
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PNP Transistor For AF driver and output stages High collector current Low collector-emitter saturation voltage CLASSIFICATION OF hFE Product-Rank BCP53-16 Range 100~250 PACKAGE INFORMATION Package MPQ SOT-223 1K Leader Size 7 inch SOT-223 A M Top |
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PNP Transistor Complementary to BCP3904 Low Current Low Voltage MARKING SOT-89 123 A EC 4 2A PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch 1 Base BD Collector 2 3 Emitter F REF. A B C D E F G H J K L Millimeter Min. Max. 4.40 3.94 1 |
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