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Savantic |
2SC3457 se breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE=: IC=1mA ; IE= |
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SavantIC |
SILICON POWER TRANSISTOR ctor cut-off current Emitter cut-off current DC current gain DC current gain Transition freuquency Collector output capacitance CONDITIONS IC=5mA; RBE=6 IC=1mA; IE=0; IE=1mA; IC=0; IC=6A;IB=1.2A IC=6A;IB=1.2A VCB=800V;IE=0 VEB=7V;IC=0 IC=0.8A ;VCE=5V |
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SavantIC |
2SC3461 TER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current |
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SavantIC |
SILICON POWER TRANSISTOR ge Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition fr |
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SavantIC |
SILICON POWER TRANSISTOR emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=5mA ;RBE=7 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=1.5A ;IB=0.3A IC=1.5A;IB=0.3A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE |
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SavantIC |
SILICON POWER TRANSISTOR tor-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS VCB=40V;IE=0 VEB=8V;IC=0 IC=10mA ;IB=0 IC=4A ;IB=0.1A IC=4A ; VCE=2V IC=0.5A ; |
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SavantIC |
SILICON POWER TRANSISTOR DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;IB=0 IC=10mA; IB=1mA IC=10mA ; VCE=5V VCB=150V; IE=0 VEB=5V; IC=0 IC=10mA ; VCE=5V IE=0 ; VCB=10V f=1MHz IC=10mA ; VCE=5V 80 MIN 150 2SC3423 SYMBOL V(BR)CEO VCEsat VBE ICBO |
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SavantIC |
SILICON POWER TRANSISTOR breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE=: IC=1mA ; IE=0 |
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SavantIC |
SILICON POWER TRANSISTOR r-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE=; IC=1mA ; |
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SavantIC |
SILICON POWER TRANSISTOR se breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE=: IC=1mA ; IE= |
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SavantIC |
SILICON POWER TRANSISTOR tage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition |
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SavantIC |
SILICON POWER TRANSISTOR e Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition fre |
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SavantIC |
SILICON POWER TRANSISTOR age Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition f |
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SavantIC |
SILICON POWER TRANSISTOR tor-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency C |
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SavantIC |
SILICON POWER TRANSISTOR akdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=5mA ;RBE=< IC=5mA ;IE=0 IE=5mA ;IC=0 IC=5A; IB=1.2A IC=5A; IB=1.2 |
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Desde 2024. D4U Semiconductor.
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