| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Savantic |
Silicon NPN Power Transistors nless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR nless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=100mA ;IB=0 IC=4A ; IB=1A IC=4A ; IB=1A VCE=1700V; VBE=0 Tj=125 VEB=5V; IC=0 IC=1A ; V |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR llector cut-off current Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage CONDITIONS IC=5A ;IB=1.25A IC=5A ;IB=1.25A VCE=1300V; VBE=0 VCE=1500V; VBE=0 Tj=125 VEB=5V; IC=0 IC=5A ; VCE=5V IF=5A 5 MIN www.datasheet4 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR r-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ;IB=0 IE=10mA ;IC=0 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IE=10mA; IC=0 IC=100mA; IB=0 IC=10A; IB=2A IC=10A; IB=2A VCE=1500V |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR er saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA; IB=0 IE=10mA; IC=0 IC=3A ;IB=0.75A IC=3A ;IB=0.75A VCE=1300V; VBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V 10 5.5 MIN 600 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR wn voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IE=10mA; IC=0 IC=3A ;IB=0.75A IC=3A ;IB=0.75A VCE=1500V; VBE=0 VEB=5V; IC=0 IC |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR wn voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IE=10mA; IC=0 IC=5A ;IB=1.25A IC=5A ;IB=1.25A VCE=1500V; VBE=0 Tj=125 VEB=5V; |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR RISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forwa |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IE=10mA; IC=0 IC=100mA; IB=0 IC=10A; IB=2A IC=10 |
|
Desde 2024. D4U Semiconductor.
|