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SavantIC |
SILICON POWER TRANSISTOR BD645 Collector-emitter breakdown voltage BD647 IC=30mA, IB=0 BD649 BD651 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD645 BD647 ICBO |
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SavantIC |
SILICON POWER TRANSISTOR d PARAMETER BD646 Collector-emitter breakdown voltage BD648 IC=-30mA, IB=0 BD650 BD652 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD64 |
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Savantic |
Silicon NPN Darligton Power Transistors W VALUE 100 3.12 UNIT K/W K/W SavantIC Semiconductor Silicon NPN Darligton Power Transistors Product Specification BD675/BD677/BD679 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter bre |
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SavantIC |
SILICON POWER TRANSISTOR BD645 Collector-emitter breakdown voltage BD647 IC=30mA, IB=0 BD649 BD651 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD645 BD647 ICBO |
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SavantIC |
SILICON POWER TRANSISTOR BD645 Collector-emitter breakdown voltage BD647 IC=30mA, IB=0 BD649 BD651 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD645 BD647 ICBO |
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SavantIC |
SILICON POWER TRANSISTOR d PARAMETER BD646 Collector-emitter breakdown voltage BD648 IC=-30mA, IB=0 BD650 BD652 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD64 |
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SavantIC |
SILICON POWER TRANSISTOR tter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Turn-on time Turn-off time CONDITIONS IC=1.5A; IB=6mA IC=1.5A ; VCE=3V VCB=120 |
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Savantic |
Silicon NPN Darligton Power Transistors W VALUE 100 3.12 UNIT K/W K/W SavantIC Semiconductor Silicon NPN Darligton Power Transistors Product Specification BD675/BD677/BD679 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter bre |
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SavantIC |
SILICON POWER TRANSISTOR BD645 Collector-emitter breakdown voltage BD647 IC=30mA, IB=0 BD649 BD651 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD645 BD647 ICBO |
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SavantIC |
SILICON POWER TRANSISTOR BD677A IC=50mA; IB=0 BD679A BD681 Collector-emitter saturation voltage BD675A/677A/679A BD681 BD675A/677A/679A BD681 BD675A Collector cut-off current BD677A BD679A BD681 BD675A Collector cut-off current BD677A BD679A BD681 IEBO Emitter cut-off curren |
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SavantIC |
(BD675A - BD681) SILICON POWER TRANSISTOR BD677A IC=50mA; IB=0 BD679A BD681 Collector-emitter saturation voltage BD675A/677A/679A BD681 BD675A/677A/679A BD681 BD675A Collector cut-off current BD677A BD679A BD681 BD675A Collector cut-off current BD677A BD679A BD681 IEBO Emitter cut-off curren |
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SavantIC |
(BD675A - BD681) SILICON POWER TRANSISTOR BD677A IC=50mA; IB=0 BD679A BD681 Collector-emitter saturation voltage BD675A/677A/679A BD681 BD675A/677A/679A BD681 BD675A Collector cut-off current BD677A BD679A BD681 BD675A Collector cut-off current BD677A BD679A BD681 IEBO Emitter cut-off curren |
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Savantic |
Silicon NPN Darligton Power Transistors W VALUE 100 3.12 UNIT K/W K/W SavantIC Semiconductor Silicon NPN Darligton Power Transistors Product Specification BD675/BD677/BD679 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter bre |
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SavantIC |
SILICON POWER TRANSISTOR d PARAMETER BD646 Collector-emitter breakdown voltage BD648 IC=-30mA, IB=0 BD650 BD652 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD64 |
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SavantIC |
SILICON POWER TRANSISTOR d PARAMETER BD646 Collector-emitter breakdown voltage BD648 IC=-30mA, IB=0 BD650 BD652 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD64 |
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SavantIC |
(BD675A - BD681) SILICON POWER TRANSISTOR BD677A IC=50mA; IB=0 BD679A BD681 Collector-emitter saturation voltage BD675A/677A/679A BD681 BD675A/677A/679A BD681 BD675A Collector cut-off current BD677A BD679A BD681 BD675A Collector cut-off current BD677A BD679A BD681 IEBO Emitter cut-off curren |
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SavantIC |
SILICON POWER TRANSISTOR heet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector |
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Desde 2024. D4U Semiconductor.
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