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SavantIC |
(MJE180 - MJE182) SILICON POWER TRANSISTOR kdown voltage MJE181 MJE182 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturat |
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SavantIC |
SILICON POWER TRANSISTOR istors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC c |
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SavantIC |
(MJE4340 - MJE4343) SILICON POWER TRANSISTOR stance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4340 MJE4341 IC=100mA ;IB=0 MJE4342 MJE4343 VCE(sat)-1 VCE(sat)-2 VBE( |
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SavantIC |
SILICON POWER TRANSISTOR Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation vo |
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SavantIC |
Silicon NPN Power Transistors V A A A A A A W MAX 3.12 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJE13003 CHARACTERISTICS Tj=25 unles otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter |
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SavantIC |
Silicon NPN Power Transistors X 3.12 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJE13002 CHARACTERISTICS Tj=25 unles otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I |
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SavantIC |
Silicon PNP Power Transistors |
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SavantIC |
Silicon NPN Power Transistors |
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Savantic |
Silicon PNP Power Transistors ient MAX 2.5 62.5 UNIT /W /W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturatio |
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Savantic |
Silicon NPN Power Transistors .5 62.5 UNIT /W /W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage |
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SavantIC |
(MJE180 - MJE182) SILICON POWER TRANSISTOR kdown voltage MJE181 MJE182 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturat |
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SavantIC |
(MJE180 - MJE182) SILICON POWER TRANSISTOR kdown voltage MJE181 MJE182 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturat |
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SavantIC |
(MJE800 - MJE803) SILICON POWER TRANSISTOR E801/803 IC=1.5A ;IB=30mA IC=2A ;IB=40mA IC=4A ;IB=40mA IC=1.5A ; VCE=3V CONDITIONS www.datasheet4u.com MJE800/801/802/803 SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 2.5 V 2.8 3.0 V VCE(sat)-1 Collector-e |
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SavantIC |
(MJE4340 - MJE4343) SILICON POWER TRANSISTOR stance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4340 MJE4341 IC=100mA ;IB=0 MJE4342 MJE4343 VCE(sat)-1 VCE(sat)-2 VBE( |
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SavantIC |
(MJE4340 - MJE4343) SILICON POWER TRANSISTOR stance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4340 MJE4341 IC=100mA ;IB=0 MJE4342 MJE4343 VCE(sat)-1 VCE(sat)-2 VBE( |
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SavantIC |
(MJE4350 - MJE4353) SILICON POWER TRANSISTOR Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4350 MJE4351 IC=-100mA ;IB=0 MJE4352 MJE4353 VCE(sat)-1 VC |
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SavantIC |
(MJE4350 - MJE4353) SILICON POWER TRANSISTOR Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4350 MJE4351 IC=-100mA ;IB=0 MJE4352 MJE4353 VCE(sat)-1 VC |
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SavantIC |
(MJE4350 - MJE4353) SILICON POWER TRANSISTOR Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4350 MJE4351 IC=-100mA ;IB=0 MJE4352 MJE4353 VCE(sat)-1 VC |
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SavantIC |
SILICON POWER TRANSISTOR fication Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Bas |
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SavantIC |
SILICON POWER TRANSISTOR ing voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector outoput capacitance CONDITIONS IC=100mA; IB=0 IC=1.5A ;I |
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Desde 2024. D4U Semiconductor.
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