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SavantIC |
Silicon NPN Power Transistors w.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A VBE Base-emitter on volta |
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SavantIC |
Silicon NPN Power Transistor A VBEsat Base-emitter saturation voltage IC=2.0A ;IB=0.2A ICBO Collector cut-off current VCB=30V; IE=0 IEBO Emitter cut-off current VEB=3V; IC=0 hFE-1 DC current gain IC=20mA ; VCE=2V hFE-2 DC current gain IC=1A ; VCE=2V fT Transition f |
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SavantIC |
SILICON POWER TRANSISTOR mitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; I |
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SavantIC |
2SD884 t) Collector-emitter saturation voltage IC=5A ;IB=0.5A VBE(sat) Base-emitter saturation voltage IC=5A ;IB=0.5A ICES Collector cut-off current VCE=330V; VEB=0 VCE=300V; VEB=0,Ta=100 IEBO Emitter cut-off current VEB=6.0V; IC=0 hFE DC current gai |
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SavantIC |
SILICON POWER TRANSISTOR IC=5A ;IB=0.5A IC=5A ;IB=0.5A VCE=330V; VEB=0 ICES Collector cut-off current VCE=300V; VEB=0,Ta=100 IEBO hFE tf Emitter cut-off current DC current gain Fall time VEB=6.0V; IC=0 IC=5A ; VCE=4V IC=5A ;-VEB=5V IB1 =0.8A;RB=0.5> 10 MIN 200 TYP. www.datas |
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Desde 2024. D4U Semiconductor.
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