No. | parte # | Fabricante | Descripción | Hoja de Datos |
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SavantIC |
SILICON POWER TRANSISTOR IB=0 IE=10mA; IC=0 IC=2.5 A;IB=0.8A IC=2.5 A;IB=0.8A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 hFE-1 hFE-2 tf ts DC current gain DC current gain Fall time IC=2.5A;IBend=0.8A;LB=5µH Storage time 13 IC=0.5A ; VCE=5V IC=2.5A ; VCE=10V |
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SavantIC |
Silicon Diffused Power Transistor ation voltage CONDITIONS IC=0.1A; IB=0 600 IE=10mA; IC=0 IC=2.5 A;IB=0.8A IC=2.5 A;IB=0.8A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 hFE-1 hFE-2 tf ts DC current gain DC current gain Fall time IC=2.5A;IBend=0.8A;LB=5µH Storage time |
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