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Savantic |
2SD5072 Transition frequency Diode forward voltage Fall time CONDITIONS IC=4 A;IB=0.8A IC=4 A;IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V IF=5A IC=4A;RL=50=;VCC=200V IB1=0.8A;IB2=-1.6A 40 8 3 MIN www.datasheet4u.com 2SD5072 SYMBOL VC |
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SavantIC |
Silicon NPN Power Transistors CB=800V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IF=3.5A IC=3A;RL=66.7>;VCC=200V IB1=0.8A;IB2=-1.6A 40 8.0 V BEsat www.DataSheet4U.com Base-emitter saturation voltage 1.5 V ICBO IEBO hFE fT VF tf Collector cut-off current 10 µA |
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Savantic |
Silicon NPN Power Transistors Transition frequency Diode forward voltage Fall time CONDITIONS IC=4 A;IB=0.8A IC=4 A;IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V IF=5A IC=4A;RL=50=;VCC=200V IB1=0.8A;IB2=-1.6A 40 8 3 MIN www.datasheet4u.com 2SD5072 SYMBOL VC |
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Savantic |
Silicon NPN Power Transistors requency Fall time CONDITIONS IC=2.5A;IB=0.8A IC=2.5A;IB=0.8A VEB=5V; IC=0 VCB=800V; IE=0 IC=0.5 A ; VCE=5V IC=0.5 A ; VCE=10V IC=3A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=66.7= 8 MIN www.datasheet4u.com 2SD5075 SYMBOL VCEsat VBEsat IEBO ICBO hFE fT tf TY |
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Savantic |
Silicon NPN Power Transistors IC=2.5A;IB=0.8A VEB=5V; IC=0 VCB=800V; IE=0 IC=1.5 A ; VCE=5V IC=0.5 A ; VCE=10V IC=3A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=66.7= 8 MIN www.datasheet4u.com 2SD5075T SYMBOL VCEsat VBEsat IEBO ICBO hFE fT tf TYP. MAX 8.0 1.5 1.0 10 UNIT V V mA µA 3 0. |
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Savantic |
Silicon NPN Power Transistors quency Fall time CONDITIONS IC=4A;IB=0.8A IC=4A;IB=0.8A VEB=5V; IC=0 VCB=800V; IE=0 IC=1 A ; VCE=5V IC=1 A ; VCE=10V IC=4A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=50= 8 MIN www.datasheet4u.com 2SD5076 SYMBOL VCEsat VBEsat IEBO ICBO hFE fT tf TYP. MAX 5.0 |
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SavantIC |
2SD5071 ltage IC=2.5 A;IB=0.8A IC=2.5 A;IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IF=3.5A IC=3A;RL=66.7>;VCC=200V IB1=0.8A;IB2=-1.6A 40 8.0 V BEsat www.DataSheet4U.com Base-emitter saturation voltage 1.5 V ICBO IEBO hFE f |
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Savantic |
2SD5075 requency Fall time CONDITIONS IC=2.5A;IB=0.8A IC=2.5A;IB=0.8A VEB=5V; IC=0 VCB=800V; IE=0 IC=0.5 A ; VCE=5V IC=0.5 A ; VCE=10V IC=3A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=66.7= 8 MIN www.datasheet4u.com 2SD5075 SYMBOL VCEsat VBEsat IEBO ICBO hFE fT tf TY |
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Savantic |
2SD5076 ration voltage IC=4A;IB=0.8A IEBO Emitter cut-off current VEB=5V; IC=0 ICBO Collector cut-off current VCB=800V; IE=0 hFE DC current gain fT Transition frequency tf Fall time IC=1 A ; VCE=5V IC=1 A ; VCE=10V IC=4A;IB1=0.8A;IB2=-1.6A VCC=200V;RL |
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Desde 2024. D4U Semiconductor.
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