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SavantIC |
2SD2394 ge IC=50µA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A ICBO Collector cut-off current VCB=60V; IE=0 IEBO Emitte |
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SavantIC |
2SD234 voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ,IB=0 IC=1mA ,IE=0 IE=1mA ,IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=1V IE=0 ; VCB= |
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SavantIC |
SILICON POWER TRANSISTOR ation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;IB=0 IC=50µA ;IE=0 IE=50µA ;IC=0 IC=2A ;IB=0.2A IC=2A ;IB=0.2A VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IE=0 |
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SavantIC |
Silicon NPN Power Transistors er cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ,IB=0 IC=1mA ,IE=0 IE=1mA ,IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=1V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=10V 40 90 3 MIN |
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SavantIC |
SILICON POWER TRANSISTOR t-off current DC current gain Fall time Diode forward voltage CONDITIONS IE=350mA , IC=0 IC=4.5A ; IB=1.2A IC=4.5A ; IB=1.2A VCE=1500V; RBE=0 IC=1A ; VCE=5V IC=4A ; IB1=0.8A; IB2=-1.5A IF=6A MIN 6 5.0 1.5 500 20 1.0 3.0 µs V TYP. MAX UNIT V V V µA S |
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SavantIC |
SILICON POWER TRANSISTOR C 80 100 IC=1 A;IB=0.2 A IC=1A ; VCE=4V BD239/A VCE=30V; IB=0 0.3 BD239B/C BD239 BD239A VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.2 BD239B BD239C VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V 40 15 1 mA mA mA 0.7 1.3 |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current DC current gain Transition frequency CONDITIONS IC=30mA ;IB=0 IC=5A ;IB=5mA IC=5A ;IB=5mA VCB=130V; IE=0 VCE=110V IB=0 VEB=5V; IC=0 IC=3A ; VCE=5V IC=0.5A ; VCE=10V 5000 MIN 110 www.datasheet4u.com 2SD2340 SYMBOL V(BR)CEO VCEsat VB |
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SavantIC |
SILICON POWER TRANSISTOR r cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=50µA; IE=0 IC=1mA; IB=0 IC=2A ; IB=4mA VCB=80V;IE=0 VEB=5V;IC=0 IC=2A ; VCE=3V IE=0 ; VCB=10V; f=1MHz IE=-0.2A ; VCE=5V;f=10MHz 1000 MIN 8 |
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SavantIC |
2SD2333 llector cut-off current DC current gain Diode forward voltage CONDITIONS IC=100mA; IB=0 IE=200mA , IC=0 IC=4A ;IB=0.8A IC=4A; IB=0.8A VCB=500V; IE=0 IC=1A ; VCE=5V IF=5A 8 MIN 800 5 2SD2333 SYMBOL VCEO(SUS) V(BR)EBO www.DataSheet4U.com TYP. MAX |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=0 IC=7A ;IB=7mA IC=7A ;IB=7mA VCB=160V IE=0 VEB=5V; IC=0 IC=7A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 5000 95 55 MIN 150 w |
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SavantIC |
SILICON POWER TRANSISTOR C 80 100 IC=1 A;IB=0.2 A IC=1A ; VCE=4V BD239/A VCE=30V; IB=0 0.3 BD239B/C BD239 BD239A VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.2 BD239B BD239C VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V 40 15 1 mA mA mA 0.7 1.3 |
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SavantIC |
2SD2335 Diode forward voltage CONDITIONS IC=100mA , IB=0 IE=200mA , IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=800V IE=0 IC=1A ; VCE=5V IF=6A 8 MIN 600 5 www.datasheet4u.com 2SD2335 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO hFE VF TYP. MAX UNIT V V 5.0 |
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SavantIC |
2SD235 breakdown voltage IE=1mA ,IC=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=50mA VBEsat Base-emitter saturation voltage IC=1A; IB=50mA ICBO Collector cut-off current VCB=40V; IE=0 IEBO Emitter cut-off current VEB=4V; IC=0 hFE DC cu |
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SavantIC |
2SD2348 |
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SavantIC |
Silicon NPN Power Transistor llector cut-off current DC current gain Diode forward voltage CONDITIONS IC=100mA; IB=0 IE=200mA , IC=0 IC=4A ;IB=0.8A IC=4A; IB=0.8A VCB=500V; IE=0 IC=1A ; VCE=5V IF=5A 8 MIN 800 5 2SD2333 SYMBOL VCEO(SUS) V(BR)EBO www.DataSheet4U.com TYP. MAX |
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SavantIC |
SILICON POWER TRANSISTOR ion voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;IB=0 IC=50µA ;IE=0 IE=50µA ;IC=0 IC=2A ;IB=0.2A IC=2A ;IB=0.2A VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IE=0 ; |
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SavantIC |
SILICON POWER TRANSISTOR -emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=1A; IB=0.1A IC=1A; IB=0.1A IC=1A ; VCE=2V VCB=30V; IE=0 VEB=5V; IC=0 IC=5mA ; VCE=2V IC=150mA ; V |
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SavantIC |
SILICON POWER TRANSISTOR C 80 100 IC=1 A;IB=0.2 A IC=1A ; VCE=4V BD239/A VCE=30V; IB=0 0.3 BD239B/C BD239 BD239A VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.2 BD239B BD239C VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V 40 15 1 mA mA mA 0.7 1.3 |
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SavantIC |
2SD2331 orward voltage CONDITIONS IE=200mA , IC=0 IC=3A; IB=0.8A IC=3A ;IB=0.8A VCB=800V IE=0 IC=0.5A ; VCE=5V IC=0.1A ; VCE=10V IF=3.5A 8 MIN 5 www.datasheet4u.com 2SD2331 SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE fT VF TYP. MAX UNIT V 3.0 5.0 1.5 10 V |
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SavantIC |
SILICON POWER TRANSISTOR ter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ,IB=0 IC=1mA ,IE=0 IE=1mA ,IC=0 IC=1A; IB=50mA IC=1A; IB=50mA VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=1V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=10V 40 90 3 MI |
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Desde 2024. D4U Semiconductor.
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