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SavantIC |
2SD1062 kdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=< IC=1mA |
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SavantIC |
SILICON POWER TRANSISTOR CS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut |
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SavantIC |
SILICON POWER TRANSISTOR saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=10 A;IB=1 A IC=10 A;IB=1 A VCB=80V; IE=0 VEB=6V; IC=0 IC=10A ; VCE=4V IC=1A ; VCE=4V IE=0; VCB=1 |
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SavantIC |
SILICON POWER TRANSISTOR reakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;RBE=; IC=5mA ;IE=0 I |
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SavantIC |
SILICON POWER TRANSISTOR r-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;RBE=: IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.3A |
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SavantIC |
SILICON POWER TRANSISTOR Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=< IC=1mA ;IE=0 IE=1mA ;IC=0 IC=6A, IB=0.3A VCB=40V;IE=0 |
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SavantIC |
Silicon NPN Power Transistors saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=5A; IB=10mA IC=5A ;IB=10mA VCB=200V ;IE=0 VCE=200V; IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V IC=0 |
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SavantIC |
SILICON POWER TRANSISTOR tor cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Turn-on time Storage time Fall time IC=3A; IB=5mA RL=10@ VBB2=4V CONDITIONS IC=3A; IB=5mA IC=3A ;IB=5mA VCE=200V; IB=0 VCB=200V; IE=0 VEB=7V; I |
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SavantIC |
SILICON POWER TRANSISTOR tor cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=5A; IB=6mA IC=5A; IB=6mA VCE=100V; IB=0 VCB=100V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=3V IC=0.8A ; VCE=10V 1500 20 MIN www.datasheet4u. |
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SavantIC |
SILICON POWER TRANSISTOR saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=5A; IB=10mA IC=5A ;IB=10mA VCB=200V ;IE=0 VCE=200V; IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V IC=0 |
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SavantIC |
SILICON POWER TRANSISTOR voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Turn-on time Storage time Fall time IC=15A; IB1=IB2=20mA RL=2?;VBB2=4V CONDITIONS IC=10A; IB=20mA |
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SavantIC |
SILICON POWER TRANSISTOR wn voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE== IC=1mA ;IE=0 IE=1mA ;IC=0 IC=4A, IB=0.4A VC |
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SavantIC |
SILICON POWER TRANSISTOR voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=> IC=1mA ;IE=0 |
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SavantIC |
SILICON POWER TRANSISTOR tage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=> IC=1mA ;IE=0 IE= |
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SavantIC |
SILICON POWER TRANSISTOR ge Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=> IC=1mA ;IE=0 IE=1m |
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SavantIC |
SILICON POWER TRANSISTOR PARAMETER CONDITIONS MIN www.datasheet4u.com 2SD1073 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ; IE=0 250 V V(BR)EBO Emitter-base breakd |
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SavantIC |
SILICON POWER TRANSISTOR or cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IC=0.5A ;L=40mH IC=4A;IB=0.04A IC=4A ;IB=0.04A VCB=300V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V f=1MHz;VCB=50V 2000 200 MIN 25 |
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SavantIC |
2SD1088 Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IC=0.5A ;L=40mH IC=4A;IB=0.04A IC=4A ;IB=0.04A VCB=300V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A |
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Desde 2024. D4U Semiconductor.
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