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SavantIC |
2SC4908 Esat Collector-emitter saturation voltage IC=0.7A ;IB=0.14A VBEsat Base-emitter saturation voltage IC=0.7A ;IB=0.14A ICBO Collector cut-off current VCB=800V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain IC=0.7A ; VCE=4V |
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SavantIC |
SILICON POWER TRANSISTOR ltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=2A ;IB=0.4A IC=2A ;IB=0.4A VCB=600V; IE=0 VEB=10V; IC=0 IC=2A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.5A ; VCE=12 |
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SavantIC |
SILICON POWER TRANSISTOR Collector-emitter breakdown voltage IC=10mA; RBE=9 800 V V(BR )EBO Emitter-base breakdown voltage IE=10mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=12A ;IB=3A 5.0 V VBEsat Base-emitter saturation voltage IC=12A ;IB=3A |
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SavantIC |
SILICON POWER TRANSISTOR mitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE-1 hFE-2 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated volatge IC=2 |
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SavantIC |
SILICON POWER TRANSISTOR tter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At rated v |
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SavantIC |
SILICON POWER TRANSISTOR ltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=0.7A ;IB=0.14A IC=0.7A ;IB=0.14A VCB=800V; IE=0 VEB=7V; IC=0 IC=0.7A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.3A ; |
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SavantIC |
SILICON POWER TRANSISTOR r-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Diode forward voltage Transition frequency CO |
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SavantIC |
SILICON POWER TRANSISTOR current Emitter cut-off current DC current gain DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Storage time Fall time CONDITIONS IC=100mA ;IB=0 VCE=800V; IE=0 VEB=1500V; RBE=0 VCE=4V; IC=0 IC=1A ; VCE=5V IC=6A ; |
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SavantIC |
SILICON POWER TRANSISTOR ent gain Collector-emitter saturation voltage Base-emitter saturation voltage Diode forward voltage Fall time CONDITIONS IE=500mA ;IC=0 VCE=1500V; RBE=0 IC=1A ; VCE=5V IC=6A ; IB=1.2A IC=6A ; IB=1.2A IF=8A ICP=6A; fH=31.5kHz IB1=1.2A;IB2=-2.4A MIN 6 |
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SavantIC |
SILICON POWER TRANSISTOR ning voltage Collector-base voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0. |
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SavantIC |
SILICON POWER TRANSISTOR saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=7A ; IB=1.4A IC=7A ; IB=1.4A VCB=800V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V 50 8 5 MIN 800 5.0 1.5 10 250 TYP |
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SavantIC |
SILICON POWER TRANSISTOR ter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At rated vo |
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SavantIC |
SILICON POWER TRANSISTOR ter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At rated vo |
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Desde 2024. D4U Semiconductor.
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