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SavantIC |
Silicon NPN Power Transistors nt VCB=200V; IE=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=3A ; VCE=4V COB Output capacitance IE=0 ; VCB=10V,f=1MHz fT Transition frequency IC=0.5A ; VCE=12V Switching times ton Turn-on time ts Storage time tf Fall |
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SavantIC |
2SC4419 ecification Silicon NPN Power Transistors 2SC4419 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage B |
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SavantIC |
SILICON POWER TRANSISTOR akdown voltage Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain |
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SavantIC |
SILICON POWER TRANSISTOR eakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS I |
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SavantIC |
SILICON POWER TRANSISTOR ge Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition f |
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SavantIC |
SILICON POWER TRANSISTOR apacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=5A; IB=0.5A VCB=200V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=12V 50 MIN 140 2SC4468 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V 0.5 10 10 |
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SavantIC |
SILICON POWER TRANSISTOR eakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequ |
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SavantIC |
SILICON POWER TRANSISTOR age Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA; IB=0 IC=4A;IB=1A IC=4A;IB=1A VCE=1500V VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC= |
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SavantIC |
SILICON POWER TRANSISTOR uration voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; IB=0 IC=0.7A;IB=0.14A IC=0.7A;IB=0.14A VCB=800V; IE=0 VEB=7V; IC=0 IC=0.7A ; VCE=4V IE=-0.3A ; VCE=12V VCB=1 |
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SavantIC |
SILICON POWER TRANSISTOR tion voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=5mA IC=50mA ;IB=5mA VCB=200V; IE=0 VEB=5V; IC=0 IC=10mA ; VCE=10V IC=100mA ; VCE=1 |
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SavantIC |
SILICON POWER TRANSISTOR itance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=2A; IB=0.2A VCB=120V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IC=-0.5A ; VCE=12V 50 MIN 80 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT 2SC4466 TYP. MAX UNIT V 1.5 10 10 180 1 |
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SavantIC |
SILICON POWER TRANSISTOR tage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=1.5A ;IB=0.3A IC=1.5A ;IB=0.3A VCB=500V; IE=0 VEB=10V; IC=0 IC=1.5A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.3A ; V |
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SavantIC |
SILICON POWER TRANSISTOR C4419 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-o |
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SavantIC |
SILICON POWER TRANSISTOR citance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=3A ;IB=0.3A VCB=160V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=12V 50 200 20 MIN 120 2SC4467 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V 1.5 10 |
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Desde 2024. D4U Semiconductor.
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