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SavantIC |
2SC4370 tor cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=0.5A; IB=50mA IC=0.5A;VCE=5V VCB=160V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=10V f=1MHz;VCB=10V 70 MI |
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SavantIC |
2SC4385 saturation voltage IC=2 A;IB=0.2 A ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=2A ; VCE=4V fT Transition frequency IE=-0.5A ; VCE=12V MIN TYP. MAX UNIT 80 V 6V 1.5 V 10 µA 1 |
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SavantIC |
2SC4304 |
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SavantIC |
SILICON POWER TRANSISTOR ansition frequency CONDITIONS IC=50mA; IB=0 IE=1mA; IC=0 IC=5 A;IB=0.5 A VCB=200V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=-0.5A ; VCE=12V 50 MIN 140 6 2SC4387 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 2.0 10 10 180 20 V µ |
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SavantIC |
(2SC4381 / 2SC4382) SILICON POWER TRANSISTOR VEB=6V; IC=0 IC=0.7A ; VCE=10V IC=0.2A ; VCE=12V IE=0 ; VCB=10V;f=1MHz CONDITIONS 2SC4381 2SC4382 SYMBOL MIN 150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 200 1.0 10 10 10 60 15 35 MHz pF V µA µA µA VCEsat Collector-emi |
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SavantIC |
(2SC4381 / 2SC4382) SILICON POWER TRANSISTOR VEB=6V; IC=0 IC=0.7A ; VCE=10V IC=0.2A ; VCE=12V IE=0 ; VCB=10V;f=1MHz CONDITIONS 2SC4381 2SC4382 SYMBOL MIN 150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 200 1.0 10 10 10 60 15 35 MHz pF V µA µA µA VCEsat Collector-emi |
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SavantIC |
SILICON POWER TRANSISTOR ollector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=0.7A ;IB=0.14A IC=0.7A ;IB=0.14A VCB=800V; IE=0 VEB=7V; IC=0 IC=0.7A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.3A ; VCE=12 |
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SavantIC |
SILICON POWER TRANSISTOR age Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain |
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SavantIC |
SILICON POWER TRANSISTOR IC=2A ;IB=0.2A IC=0.5A ; VCE=2V VCB=20V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=2.5A ; VCE=2V IC=0.5A ; VCE=2V 30 V Collector-emitter saturation voltage 0.8 V Base-emitter on voltage 1.0 V Collector cut-off current 1.0 µA Emitter cut-off c |
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SavantIC |
SILICON POWER TRANSISTOR DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=0.5A; IB=50mA IC=0.5A;VCE=5V VCB=160V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=10V f=1MHz;VCB=10V 70 MIN 160 2SC4370 SYMBOL V(BR)CEO VCEsat VBE |
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SavantIC |
SILICON POWER TRANSISTOR ation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; IB=0 IC=2A;IB=0.4A IC=2A;IB=0.4A VCB=800V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=4V IE=-0.5A ; VCE=12V VCB=10V;f=1MHz |
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SavantIC |
SILICON POWER TRANSISTOR turation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; IB=0 IC=3A;IB=0.6A IC=3A;IB=0.6A VCB=800V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=4V IE=-1A ; VCE=12V VCB=10V;f=1MHz |
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SavantIC |
SILICON POWER TRANSISTOR ctor cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IE=1mA; IC=0 IC=2.5A;IB=0.5A IC=2.5A;IB=0.5A VCB=1200V; IE=0 VEB=7V; IC=0 IC=2.5A ; VCE=4V IE=0.5A ; VCE=12V 6 4 MHz MIN 800 7 1.0 1.5 100 100 |
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SavantIC |
SILICON POWER TRANSISTOR turation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; IB=0 IC=1mA; IE=0; IE=5mA; IC=0; IC=5A; IB=5mA IC=5A; IB=5mA VCB=100V ;IE=0 VEB=7V; IC=0 IC=5A ; VCE=2V 2000 MIN 1 |
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SavantIC |
SILICON POWER TRANSISTOR sition frequency CONDITIONS IC=50mA; IB=0 IE=1mA; IC=0 IC=2 A;IB=0.2 A VCB=120V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=4V IE=-0.5A ; VCE=12V 50 MIN 80 6 2SC4385 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 1.5 10 10 180 20 V µA µ |
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SavantIC |
SILICON POWER TRANSISTOR nsition frequency CONDITIONS IC=50mA; IB=0 IE=1mA; IC=0 IC=3 A;IB=0.3 A VCB=160V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=-0.5A ; VCE=12V 50 MIN 120 6 2SC4386 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 1.5 10 10 180 20 V µA |
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SavantIC |
SILICON POWER TRANSISTOR itance CONDITIONS IC=50mA; IB=0 IC=5 A;IB=0.5 A VCB=200V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=-0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 MIN 180 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB 2SC4388 TYP. MAX UNIT V 2.0 10 10 180 20 300 V µA µA MHz |
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Desde 2024. D4U Semiconductor.
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