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SavantIC |
SILICON POWER TRANSISTOR ter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDIT |
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SavantIC |
SILICON POWER TRANSISTOR ector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;RBE=: IC=1mA; IE=0 |
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SavantIC |
SILICON POWER TRANSISTOR ltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0 IC=8A; IB=1.6A IC=8A; IB=1.6A VCB=500V ;IE=0 VEB=10V; IC=0 IC=8A ; VCE |
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SavantIC |
2SC4140 kdown voltage IC=25mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=10A; IB=2A VBEsat Base-emitter saturation voltage IC=10A; IB=2A ICBO Collector cut-off current VCB=500V ;IE=0 IEBO Emitter cut-off current VEB=10V; IC=0 hFE DC curre |
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SavantIC |
SILICON POWER TRANSISTOR Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CO |
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SavantIC |
SILICON POWER TRANSISTOR breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain |
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SavantIC |
SILICON POWER TRANSISTOR ltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition fr |
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SavantIC |
SILICON POWER TRANSISTOR Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ; RBE=8 IC=1mA ; IE=0 IE |
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SavantIC |
SILICON POWER TRANSISTOR er breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gai |
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SavantIC |
SILICON POWER TRANSISTOR ion voltage Base-emitter saturation voltage CONDITIONS IE=1mA ;IC=0 IC=7A ;IB=2.5A IC=7A ;IB=2.5A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE-1 hFE-2 fT DC current gain DC current gain Transition frequency IC=1A ; VCE=5V IC=7A ; |
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SavantIC |
SILICON POWER TRANSISTOR r saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=5A;IB=1.2 A IC=5A;IB=1.2 A IC=100mA;IB=0 VEB=4V; |
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SavantIC |
SILICON POWER TRANSISTOR emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=6A;IB=1.5 A IC=6A;IB=1.5 A IC=100mA;IB=0 V |
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SavantIC |
SILICON POWER TRANSISTOR ent Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=10V; IC=0 IC=3A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.5A ; VCE=12V 10 MIN 400 2SC4130 SYMBO |
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SavantIC |
SILICON POWER TRANSISTOR ing voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At rated volatge IC=7. |
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SavantIC |
SILICON POWER TRANSISTOR tage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ,IB=0 IC=1mA ,IE=0 IC=5A; IB=1A IC=5A; IB=1A VCB=500V; IE= |
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SavantIC |
SILICON POWER TRANSISTOR voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency COND |
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SavantIC |
SILICON POWER TRANSISTOR Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS I |
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SavantIC |
SILICON POWER TRANSISTOR breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC= |
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SavantIC |
SILICON POWER TRANSISTOR voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25mA; IB=0 IC=5 A;IB=80m A IC=5 A;IB=80m A VCB=100V; IE=0 VEB=15V; IC=0 IC=5A ; VCE=1V IC=1A ; VCE=12V IE=0; VCB=10V;f=1MH |
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SavantIC |
SILICON POWER TRANSISTOR tage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=500V ;IE=0 VEB=10V; IC=0 IC=6A ; VCE= |
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Desde 2024. D4U Semiconductor.
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