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SavantIC |
SILICON POWER TRANSISTOR ration voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Trainsition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=3A ;IB=0.15A IC=3A ;IB=0.15A VCB=100V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=1V IC |
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SavantIC |
SILICON POWER TRANSISTOR ors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.5A ;L=25mH IC=10A; IB=2A IC=10A; IB=2A VCB=500V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=5V IC=10A ; VCE=5V IC=1A ; VCE=10V;f=1.0MHz 15 10 MIN 400 2SC |
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SavantIC |
2SC3528 ;L=25mH 400 V VCE(sat) Collector-emitter saturation voltage IC=10A; IB=2A VBE(sat) Base-emitter saturation voltage IC=10A; IB=2A ICBO Collector cut-off current VCB=500V; IE=0 1.0 V 1.5 V 0.1 mA IEBO hFE-1 Emitter cut-off current DC current |
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SavantIC |
2SC3540 ;IB=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.15A VBEsat Base-emitter saturation voltage IC=3A ;IB=0.15A ICBO Collector cut-off current VCB=100V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE-1 DC current gain IC=1A ; |
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SavantIC |
SILICON POWER TRANSISTOR MIN 160 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 180 2.0 V VCEsat Collector-emitter saturation voltage 2SA1386 2SA1386A ICBO Collector cut-off current 100 VCB=180V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1M |
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SavantIC |
2SC3577 rent DC current gain DC current gain Transition frequency CONDITIONS IC=0.5A;L=50mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=800V; VBE=0 VEB=7V; IC=0 IC=10mA ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V 10 6 6 MHz MIN 650 1.5 1.5 50 50 TYP. MAX UNIT V V V µA µA |
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SavantIC |
2SC3505 ct Specification 2SC3505 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 VCEsat |
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SavantIC |
SILICON POWER TRANSISTOR r saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.5A ;L=50mH IC=2A ;IB=0.4A IC=2A ;IB=0.4A VCB=1000V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=5V IC=0.2A ; VCE=5V;f=1MHz 6 4 MIN 800 2SC3 |
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SavantIC |
SILICON POWER TRANSISTOR MIN 160 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 180 2.0 V VCEsat Collector-emitter saturation voltage 2SA1386 2SA1386A ICBO Collector cut-off current 100 VCB=180V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1M |
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SavantIC |
SILICON POWER TRANSISTOR TERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Em |
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SavantIC |
SILICON POWER TRANSISTOR n voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Fall time CONDITIONS IC=1mA ; RBE=; IC=1mA ; IE=0 IE=1mA ; IC=0 IC=5 |
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SavantIC |
SILICON POWER TRANSISTOR -emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.5A ;L=50mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=1000V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=5V IC=0.5A ; VCE=5V;f=1MHz 6 MIN 800 |
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SavantIC |
SILICON POWER TRANSISTOR llector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10m |
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SavantIC |
SILICON POWER TRANSISTOR B=0 VCB=80V; IE=0 VEB=5V; IC=0 IC=0.2A ; VCE=1V 80 V Emitter-base breakdown voltage 5 V Collector-emitter saturation voltage 1.5 V Collector cut-off current 0.5 mA Collector cut-off current 0.1 mA Emitter cut-off current 0.1 mA DC c |
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SavantIC |
SILICON POWER TRANSISTOR Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA , IB=0 IC=1mA , IE=0 IC=0.8A; IB=0.16A IC=0.8A; IB=0.16A VCB=8 |
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SavantIC |
SILICON POWER TRANSISTOR mitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=5A ;IB=0.5A;L=1mH IC=5A ;IB=0.5A IC=5A ;IB=0.5A VCB=100V; IE=0 VCE=100V;VBE(OFF)=-1.5V |
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SavantIC |
SILICON POWER TRANSISTOR ent Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.5A; IB=0.1A;L=1mH IC=0.5 A;IB=0.1A IC=0.5 A;IB=0.1A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=5V 20 10 MIN 400 2SC3569 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO |
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SavantIC |
SILICON POWER TRANSISTOR voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=3.0A , IB=0.6A,L=1mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=400V; IE=0 VCE=40 |
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SavantIC |
SILICON POWER TRANSISTOR rent DC current gain DC current gain Transition frequency CONDITIONS IC=0.5A;L=50mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=800V; VBE=0 VEB=7V; IC=0 IC=10mA ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V 10 6 6 MHz MIN 650 1.5 1.5 50 50 TYP. MAX UNIT V V V µA µA |
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Desde 2024. D4U Semiconductor.
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