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SavantIC |
2SC3229 er saturation voltage IC=10mA; IB=1m A IC=100µA; IB=0 IE=10µA; IC=0 IC=0.5mA ; VCE=10V IC=20mA ; VCE=10V VCB=240V; IE=0 VEB=5V; IC=0 IE=0; VCB=20V;f=1MHz IE=20mA ; VCB=20V 75 300 1.0 V Collector-emitter breakdown voltage V Emitter-base breakdow |
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SavantIC |
SILICON POWER TRANSISTOR n voltage IC=8A ;IB=0.8A VBE ICBO IEBO hFE-1 Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain IC=8A ; VCE=5V VCB=200V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V hFE-2 DC current gain IC=8A ; VCE=5V fT Transition f |
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SavantIC |
2SC3258 -emitter saturation voltage IC=3A; IB=0.15A VBEsat Base-emitter saturation voltage IC=3A; IB=0.15A ICBO Collector cut-off current VCB=100V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE-1 DC current gain IC=1A ; VCE=1V hFE-2 DC curre |
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SavantIC |
2SC3280 wn voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=8A IB=0.8A IC=6A ; VC |
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SavantIC |
2SC3296 -emitter on voltage IC=0.5A ; VCE=10V ICBO Collector cut-off current VCB=120V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=0.5A ; VCE=10V COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=0.5 |
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SavantIC |
SILICON POWER TRANSISTOR ; IB=1mA VCB=240V; IE=0 VEB=5V; IC=0 IC=0.5mA ; VCE=10V IC=20mA ; VCE=10V IC=20mA ; VCE=20V f=1MHz;VCB=20V 20 30 75 MIN www.datasheet4u.com KTC3229 SYMBOL VCEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX 1.0 1.0 1.0 UNIT V µA µA 200 MHz 4.0 pF 2 |
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SavantIC |
2SC3231 or cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=4A; IB=0.4A VCB=200V;IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=0.5A ; VCE=5V 30 MIN 150 200 7 2SC3231 SYMBOL V(BR)CEO V( |
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SavantIC |
2SC3257 |
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SavantIC |
SILICON POWER TRANSISTOR rent Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V 15 8 11 MHz MIN 400 1.0 1.5 100 100 TY |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;L=25mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=10V 15 8 MIN 500 2SC3211A SYMBOL VCEO(SUS) VCE(s |
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SavantIC |
SILICON POWER TRANSISTOR ctor-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.2A ; IB=0 IC=10A; IB |
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SavantIC |
SILICON POWER TRANSISTOR IC=100µA; IB=0 IE=10µA; IC=0 IC=0.5mA ; VCE=10V IC=20mA ; VCE=10V VCB=240V; IE=0 VEB=5V; IC=0 IE=0; VCB=20V;f=1MHz IE=20mA ; VCB=20V 75 300 1.0 V Collector-emitter breakdown voltage V Emitter-base breakdown voltage 7 V DC current gain 20 DC |
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SavantIC |
SILICON POWER TRANSISTOR oltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IE=1mA ;IC=0 IC=2A ;IB=0.2 A IC=0.5A ; VCE=2V VCB=20V; IE=0 VE |
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SavantIC |
SILICON POWER TRANSISTOR ration voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=1A; IB=0.2 A IC=1A; IB=0.2 A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V 20 MIN 40 |
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SavantIC |
SILICON POWER TRANSISTOR DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=5A; IB=0.5A VCB=230V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IE=-2A ; VCE=12V 50 MIN 230 2SC3264 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT TYP. |
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SavantIC |
2SC3235 ration voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=1A; IB=0.2 A IC=1A; IB=0.2 A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V 20 MIN 40 |
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SavantIC |
2SC3212 g voltage IC=0.2A;L=25mH VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A VBEsat Base-emitter saturation voltage IC=5A ;IB=1A ICBO Collector cut-off current 2SC3212 VCB=800V; IE=0 2SC3212A VCB=900V; IE=0 IEBO Emitter cut-off current |
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SavantIC |
SILICON POWER TRANSISTOR mitter saturation voltage 2SC3212 2SC3212A CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V; IE=0 100 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 15 8 3.5 MHz 100 µA µA MIN 500 1.0 1.5 TYP. MAX UNI |
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SavantIC |
SILICON POWER TRANSISTOR mitter saturation voltage 2SC3212 2SC3212A CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V; IE=0 100 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 15 8 3.5 MHz 100 µA µA MIN 500 1.0 1.5 TYP. MAX UNI |
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SavantIC |
SILICON POWER TRANSISTOR tter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated voltage ICEO IEBO hFE-1 hFE-2 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated voltage IC=10A |
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Desde 2024. D4U Semiconductor.
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