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SavantIC |
2SC2578 breakdown voltage IC=10mA ;RBE=: V(BR)EBO Emitter-base breakdown voltage IE=5mA; IC=0 ICBO Collector cut-off current VCB=100V; IE=0 IEBO Emitter cut-off current VEB=4V; IC=0 hFE DC current gain IC=3A ; VCE=4V VCE(sat) Collector-emitter sa |
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SavantIC |
2SC2579 off current DC current gain Collector-emitter saturation voltage Transition frequency CONDITIONS IC=5mA; IE=0 IC=10mA ;RBE=9 IE=5mA ; IC=0 VCB=160V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=5A ; IB=0.5A IC=0.5A ; VCE=10V 20 50 2.0 V MHz MIN 160 160 6 0.1 |
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SavantIC |
Silicon NPN Power Transistor off current DC current gain Collector-emitter saturation voltage Transition frequency CONDITIONS IC=5mA; IE=0 IC=10mA ;RBE=9 IE=5mA ; IC=0 VCB=160V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=5A ; IB=0.5A IC=0.5A ; VCE=10V 20 50 2.0 V MHz MIN 160 160 6 0.1 |
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SavantIC |
2SC2525 therwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=; V(BR)CBO Collector-base breakdown voltage IC=50µA; IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA; IC=0 VCEsat VBE ICBO IEBO Col |
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SavantIC |
SILICON POWER TRANSISTOR r-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=5A; IB=0.5A VCB=200V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=10V 50 MIN |
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SavantIC |
SILICON POWER TRANSISTOR Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDIT |
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SavantIC |
2SC2535 S V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A ICBO Collec |
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SavantIC |
SILICON POWER TRANSISTOR n voltage 2SC2556A V(BR)EBO VCEsat ICBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current DC current gain DC current gain Output capacitance Transition frequency IE=10µA ;IC=0 IC=500mA ;I |
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SavantIC |
SILICON POWER TRANSISTOR n voltage 2SC2556A V(BR)EBO VCEsat ICBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current DC current gain DC current gain Output capacitance Transition frequency IE=10µA ;IC=0 IC=500mA ;I |
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SavantIC |
(2SC2591 / 2SC2592) SILICON POWER TRANSISTOR 0 2SC2592 IE=10µA ,IC=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=120V; IE=0 VEB=4V; IC=0 IC=150mA ; VCE=10V IC=500mA ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=50mA ; VCE=10V CONDITIONS SYMBOL 2SC2591 2SC2592 MIN 150 TYP. MAX UNIT V(BR)CEO Collector-emitt |
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SavantIC |
2SC2542 TERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Em |
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SavantIC |
SILICON POWER TRANSISTOR voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;RBE=8 IC=50µA |
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SavantIC |
SILICON POWER TRANSISTOR PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDI |
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SavantIC |
SILICON POWER TRANSISTOR voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IC=5A; IB=1A IC=5 |
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SavantIC |
SILICON POWER TRANSISTOR ltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A; IB=0.5 A IC=5A ; VCE=5V VCB=140V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC= |
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SavantIC |
SILICON POWER TRANSISTOR RISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Output capacitance Transition f |
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SavantIC |
2SC2556 emitter breakdown voltage 2SC2556 2SC2556A IC=2mA ;IB=0 40 50 V V(BR)CBO Collector-base breakdown voltage 2SC2556 2SC2556A IC=10µA ;IE=0 130 180 V V(BR)EBO Emitter-base breakdown voltage IE=10µA ;IC=0 5 V VCEsat Collector-emitter satur |
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SavantIC |
SILICON POWER TRANSISTOR e Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=3.0A ; IB1=0.3A;L=1mH IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=100V ;IE=0 VCE=100V; VBE=-1.5V Ta=125 |
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SavantIC |
SILICON POWER TRANSISTOR n voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA ; RBE=: IC=50 |
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SavantIC |
SILICON POWER TRANSISTOR down voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IC=1A; IB=0.2 |
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Desde 2024. D4U Semiconductor.
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