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SavantIC |
2SC2335 R Rth j-C Thermal resistance junction to case VALUE 500 400 7 7 15 3.5 40 150 -50~150 UNIT V V V A A A W MAX 3.125 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com Product Specification 2SC2335 CHARACTERISTICS |
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SavantIC |
2SC2373 TICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat VBEsat VCEO VEBO ICBO IEBO hFE fT Collector-emitter saturation voltage IC=5A; IB=0.5 A Base-emitter saturation voltage IC=5A; IB=0.5 A Collector-emitt |
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SavantIC |
SILICON POWER TRANSISTOR ctor-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=1.0A ,IB=0.1A,L=1mH IC=1A; IB=0.1A IC=1A ;IB=0.1A VCB |
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SavantIC |
SILICON POWER TRANSISTOR reakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;RBE=: IC=1m A; IE=0 IE=1m A; IC |
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SavantIC |
SILICON POWER TRANSISTOR voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=7A; IB=1.4A IC=7A; IB=1.4A VCB=500V; IE=0 VEB=7V; IC=0 IC=7A ; VCE=4V IC=1A ; VCE=12V 10 MIN 400 500 |
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SavantIC |
SILICON POWER TRANSISTOR base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA ,RBE=: IC=1mA; IE=0 IE=1mA; IC=0 IC=0.5A; IB |
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SavantIC |
SILICON POWER TRANSISTOR ent DC current gain Transition frequency CONDITIONS IC=0.1 A; IB=0 IE=1m A; IC=0 IC=4A; IB=0.4A IC=3A ; VCE=4V VCB=100V; IE=0 VEB=6V; IC=0 IC=2.5A ; VCE=3V IC=0.5A ; VCE=10V 50 MIN 70 6 2SC2361 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE ICBO IEBO hFE fT |
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SavantIC |
SILICON POWER TRANSISTOR ollector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=8A; IB=1.6A IC=8A; IB=1.6A VCB=500V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IC=10A ; VCE=4V IC=1A |
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SavantIC |
SILICON POWER TRANSISTOR 50 UNIT V V V A A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation volta |
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SavantIC |
SILICON POWER TRANSISTOR ied PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency 2SC2336 2SC2336A 2SC2336B SYMBOL VCE(sat) V |
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SavantIC |
SILICON POWER TRANSISTOR -off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IE=1mA ;IC=0 IC=4A; IB=1.25A IC=4A; IB=1.25A VCB=600V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=10V 12 MIN 500 6 2SC2365 SYMBOL V(BR)CEO V(BR)E |
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SavantIC |
SILICON POWER TRANSISTOR e-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=5.0A ,IB=0.5A,L=1mH IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V |
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SavantIC |
2SC2336 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-emitter saturation voltage IC=0.5A; IB=50mA VBE(sat) Base-emitter saturation voltage IC=0.5A ;IB=50mA ICBO Collector cut-off cur |
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SavantIC |
SILICON POWER TRANSISTOR Collector cut-off current Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Turn on time Storage time Fall time IC=0.5A;IB1=-IB2=0.1A RL=300:;VCC=150V CONDITIONS IC=0 |
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SavantIC |
SILICON POWER TRANSISTOR r saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=5.0A ,IB=0.5A,L=1mH IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=100V; |
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SavantIC |
SILICON POWER TRANSISTOR W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.125 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specifi |
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SavantIC |
SILICON POWER TRANSISTOR ied PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency 2SC2336 2SC2336A 2SC2336B SYMBOL VCE(sat) V |
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SavantIC |
SILICON POWER TRANSISTOR ied PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency 2SC2336 2SC2336A 2SC2336B SYMBOL VCE(sat) V |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=1A ; VCE=5V VCB=150V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=5A ; VCE=5V IE |
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SavantIC |
SILICON POWER TRANSISTOR ter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA; IB=0 IE=1m A;IC=0 IC=5 A;IB=1 A IC=5 A;IB |
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Desde 2024. D4U Semiconductor.
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