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SavantIC |
SILICON POWER TRANSISTOR tor cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=0.1A ;IB=0 IE=1mA ;IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=750V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0; VCB=1 |
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SavantIC |
2SC1826 IC=25mA ;IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage |
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SavantIC |
2SC1880 r-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA, IB=0 IC=1mA, IE=0 IE=50mA, IC=0 IC=2A ,IB=8mA VCB=100V, IE=0 VCE=100V, IB=0 VEB=5V; IC=0 IC=2A ; VCE=2V 1000 |
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SavantIC |
2SC1871A llector-base breakdown voltage Emitter-base breakdown voltage ollector-emitter saturation voltage ase-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 400 IC=1mA ; |
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SavantIC |
SILICON POWER TRANSISTOR tor cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IE=1mA ;IC=0 IC=5A; IB=1A IC=5A; IB=1A VCB=750V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=10V IC=0.1A ; VCE=10V 8 MIN 600 5 2SC1895 SYMBOL VCEO(SUS) V(BR |
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SavantIC |
SILICON POWER TRANSISTOR ge Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=3A ;IB=0.3A VCB=80V;IE |
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SavantIC |
SILICON POWER TRANSISTOR -emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 VEB=6V; IC=0 IC=0.2A ; VCE=10V IC=0 |
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SavantIC |
SILICON POWER TRANSISTOR voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=2mA;IB=0 IC=1mA ;IE=0 IC=0.5A ;IB=50mA VCB |
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SavantIC |
SILICON POWER TRANSISTOR voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=2mA;IB=0 IC=1mA ;IE=0 IC=2 |
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SavantIC |
SILICON POWER TRANSISTOR -emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ; IB=0 IE=1mA ; IC=0 IC=1A ;IB=0.1A IC=1A ; VCE=2V VCB=150V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=5V IC=5A ; VCE=5V 20 15 MIN 100 7 2S |
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SavantIC |
SILICON POWER TRANSISTOR ation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=450V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V 15 10 MIN 400 4 |
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SavantIC |
SILICON POWER TRANSISTOR -base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=5A; IB=1A IC=5A; IB=1A VCB=300V; I |
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SavantIC |
SILICON POWER TRANSISTOR r-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=4A; IB=0.8A IC=4A |
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SavantIC |
SILICON POWER TRANSISTOR f current Emitter cut-off current DC current gain CONDITIONS IC=30mA, IB=0 IC=1mA, IE=0 IE=50mA, IC=0 IC=2A ,IB=8mA VCB=100V, IE=0 VCE=100V, IB=0 VEB=5V; IC=0 IC=2A ; VCE=2V 1000 MIN 120 120 5 2SC1880 SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat ICBO |
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SavantIC |
SILICON POWER TRANSISTOR ent Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=0.1A ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=750V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0; VCB=10V;f=1MHz 10 MIN |
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SavantIC |
SILICON POWER TRANSISTOR r-emitter saturation voltage Base-emitter on voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=100µA ;IE=0 IC=100A ;IB=0 IE=100µA ;IC=0 IC=50mA ;IB=5mA IC=30mA ; VCE=10V IC=5mA ; VCE=50V IC=30mA ; VCE=10V I |
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SavantIC |
SILICON POWER TRANSISTOR nt gain DC current gain Turn-on time Turn-off time CONDITIONS IC=50mA,RBE=< IE=50mA, IC=0 IC=2.5A ,IB=20mA VCB=60V, IE=0 VCE=30V, ,RBE=< IC=1.5A ; VCE=1.5V IC=2.5A ; VCE=1.5V 1000 500 MIN 60 7 2SC1881 SYMBOL VCEO(SUS) V(BR)EBO VCEsat ICBO ICEO hFE- |
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Desde 2024. D4U Semiconductor.
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