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SavantIC |
SILICON POWER TRANSISTOR mA ; VCE=5V VCB=50V;IE=0 VEB=5V; IC=0 IC=150mA ; VCE=5V IC=500mA ; VCE=5V IE=0; VCB=10V;f=1MHz IC=150mA ; VCE=5V CONDITIONS 2SC1624 2SC1625 SYMBOL MIN 120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 100 5 0.5 1.0 1.0 1.0 70 |
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SavantIC |
2SC1618 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4A;IB=0.4 A VBEsat Base-emitter saturation voltage IC=4A;IB=0.4 A ICBO Collector cut-off current VCB=80V; IE=0 IEBO Emitter cut-off current |
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SavantIC |
SILICON POWER TRANSISTOR mA ; VCE=5V VCB=50V;IE=0 VEB=5V; IC=0 IC=150mA ; VCE=5V IC=500mA ; VCE=5V IE=0; VCB=10V;f=1MHz IC=150mA ; VCE=5V CONDITIONS 2SC1624 2SC1625 SYMBOL MIN 120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 100 5 0.5 1.0 1.0 1.0 70 |
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SavantIC |
2SC1626 Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output |
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SavantIC |
SILICON POWER TRANSISTOR ut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=100mA; IB=0 IC=5A;IB=0.5 A IC=5A;IB=0.5 A VCB=250V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=0.5A ; VCE=5V 30 15 MIN 100 SYMBOL VCEO(S |
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SavantIC |
2SC1678 0.5A; IB=50m A V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1.0 V 65 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 65 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 4V ICBO Collector cut-off current VCB=30V; |
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SavantIC |
SILICON POWER TRANSISTOR er sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITION |
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SavantIC |
SILICON POWER TRANSISTOR tion voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA; IB=0 IE=1mA; IC=0 IC=4A;IB=0.4 A IC=4A;IB=0.4 A VCB=80V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 20 MIN 60 6 2SC1618 |
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SavantIC |
SILICON POWER TRANSISTOR ion voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA; IB=0 IE=1mA; IC=0 IC=4A;IB=0.4 A IC=4A;IB=0.4 A VCB=100V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 20 MIN 80 6 2SC1619 |
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SavantIC |
SILICON POWER TRANSISTOR age Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=90V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=10V |
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SavantIC |
SILICON POWER TRANSISTOR mitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain DC current gain Collectpr output capacitance Transition frequency CONDITIONS IC=0.5A; IB=50m A IC=1mA; IE=0 IC=10mA; IB=0 IE=1mA; IC=0 VCB=30V;IE=0 VCE= |
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SavantIC |
SILICON POWER TRANSISTOR breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A; IB=0 IC=1m A; IE=0 I |
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SavantIC |
SILICON POWER TRANSISTOR or-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ; IB=0 IC=0. |
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SavantIC |
SILICON POWER TRANSISTOR reakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=5mA ; IB=0 IC=0.5mA ; IE=0 IE=0.5mA ; IC=0 IC=500mA; IB=50mA IC=400m A ; VCE=10V VCB=200V ;I |
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SavantIC |
SILICON POWER TRANSISTOR er sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITION |
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Desde 2024. D4U Semiconductor.
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