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SavantIC |
2SC1448 ctor-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=30mA; IB=0 IE=1mA; IC=0 IC=0.5A; IB=50m A VCB=150V;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=10V IC=0.5A ; VCE=10V 40 5 MIN 150 |
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SavantIC |
2SC1403 ation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=160V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=10V 30 MIN 100 5 2SC140 |
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SavantIC |
SILICON POWER TRANSISTOR tter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ;IB=0 IE=1mA ;IC=0 IC=6A; IB=1A IC=6A ; VCE=4V VCB=80V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=0.5A |
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SavantIC |
SILICON POWER TRANSISTOR voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10µA ;IE=0 IC=1mA ;IB=0 IE=10µA ;IC=0 IC=50mA ;IB=5mA VCB=200V;IE=0 VEB=4V; IC=0 IC=50mA ; VCE=10V IC=10 |
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SavantIC |
SILICON POWER TRANSISTOR -off current DC current gain CONDITIONS IC=0.1A; IB=0 IE=1.0mA; IC=0 IC=5 A;IB=1.2 A IC=5 A;IB=1.2 A VCB=1500V;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V 8 MIN 500 5 2SC1413A SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 10 2 1. |
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SavantIC |
SILICON POWER TRANSISTOR tion voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IE=1mA ;IC=0 IC=10A; IB=1A IC=10A; IB=1A VCB=150V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IC=1A ; VCE=12V 20 10 MIN 150 5 2SC1440 |
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SavantIC |
SILICON POWER TRANSISTOR ase-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ;IB=0 IC=2A; IB=0.2A IC=6A ;IB=0.6A IC=2A; IB=0.2A IC=6A ;IB=0.6A VCB=100V; IE=0 |
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SavantIC |
2SC1402 =5A; IB=0.5A VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A ICBO Collector cut-off current VCB=140V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=3A ; VCE=4V fT Transition frequency IC=0.5A ; VCE=10V Produc |
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SavantIC |
2SC1413A C=0 5 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.2 A 10 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1.2 A 2V ICBO Collector cut-off current VCB=1500V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hF |
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SavantIC |
SILICON POWER TRANSISTOR r cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=160V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=10V 30 MIN 100 5 2SC1403 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO |
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SavantIC |
SILICON POWER TRANSISTOR off current DC current gain CONDITIONS IC=0.1A; IB=0 IE=1.0mA; IC=0 IC=5 A;IB=1.2 A IC=5 A;IB=1.2 A VCB=1200V;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V 8 MIN 500 5 2SC1413 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 10 2 1.0 |
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SavantIC |
SILICON POWER TRANSISTOR saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=30mA ,IB=0 IC=1mA ,IE=0 IE=1mA ,IC=0 IC=1A; IB=0.1A IC=1A; IB=0.1A VCB=50V; IE=0 VEB=5V; IC=0 IC=1 |
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SavantIC |
SILICON POWER TRANSISTOR ion voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V |
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SavantIC |
SILICON POWER TRANSISTOR ase breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=0.5A; IB=50m A VCB=150V;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V 30 MIN 150 1 |
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SavantIC |
SILICON POWER TRANSISTOR uration voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10µA ;IE=0 IC=1mA ;IB=0 IE=10µA ;IC=0 IC=50mA ;IB=5mA VCB=200V;IE=0 VEB=4V; IC=0 IC=50mA ; VCE=10V IC=10mA ; VCE=30V 30 55 MIN 300 30 |
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SavantIC |
2SC1413 0 5 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.2 A 10 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1.2 A 2V ICBO Collector cut-off current VCB=1200V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE |
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SavantIC |
2SC1419 0 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 50 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 5V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=140V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=10V 30 MIN 80 5 2SC1402 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO I |
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SavantIC |
SILICON POWER TRANSISTOR saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=30mA ,IB=0 IC=1mA ,IE=0 IE=1mA ,IC=0 IC=1A; IB=0.1A IC=1A; IB=0.1A VCB=50V; IE=0 VEB=5V; IC=0 IC=1 |
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SavantIC |
SILICON POWER TRANSISTOR t Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=1A; IB=0.1A IC=1A; IB=0.1A VCB=110V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=2V IC=0.4A ; VCE=10V 50 30 MIN 110 5 2SC1431 SYMBOL VCEO(SUS) V(BR)EBO VCEs |
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Desde 2024. D4U Semiconductor.
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