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SavantIC |
2SC1398 NS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage 2SC1398 2SC1398A IC=10mA ,IB=0 50 70 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A VBEsat Base-emitter |
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SavantIC |
SILICON POWER TRANSISTOR off current DC current gain CONDITIONS IC=100mA; IB=0 IE=1.0mA; IC=0 IC=5 A;IB=1.2 A IC=5 A;IB=1.2 A VCB=1200V;IE=0 VEB=5V; IC=0 IC=5A ; VCE=10V 10 MIN 500 5 2SC1309 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V 10 2 1 |
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SavantIC |
Silicon NPN Transistor voltage IC=6A; IB=1.2A VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A ICBO Collector cut-off current VCB=800V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 DC current gain IC=4A ; VCE= |
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SavantIC |
SILICON POWER TRANSISTOR rrent Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ;IB=0 IE=1mA ;IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=800V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 8 3 MIN 400 5 2SC1308 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsa |
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SavantIC |
SILICON POWER TRANSISTOR urrent DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IE=1mA ;IC=0 IC=1A ;IB=0.2A IC=1A ;IB=0.2A VCB=750V;IE=0 VEB=5V; IC=0 IC=2A ; VCE=3V IC=0.5A ; VCE=10V 4 MIN 750 5 2SC1316 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT |
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SavantIC |
2SC1368 0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A ICBO Collector cut-off current VCB=25V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=0.5A ; VCE=2V fT Transition frequency IC=0.5A ; VCE=5V Product Spe |
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SavantIC |
Silicon NPN Transistor 0 5V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.2 A 10 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1.2 A 2V ICBO Collector cut-off current IEBO Emitter cut-off current VCB=1200V;IE=0 VEB=5V; IC=0 1.0 mA 1.0 mA hFE DC cu |
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SavantIC |
SILICON POWER TRANSISTOR ut-off current DC current gain Transition frequency CONDITIONS IC=100mA; IB=0 IE=1mA; IC=0 IC=3 A;IB=0.6 A IC=3 A;IB=0.6 A VCB=1000V;IE=0 VEB=5V; IC=0 IC=2A ; VCE=3V IC=0.5A ; VCE=10V 4.5 MIN 500 5 2SC1348 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat IC |
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SavantIC |
Silicon NPN Power Transistors t Collector-emitter saturation voltage IC=1A ;IB=0.2A VBEsat Base-emitter saturation voltage IC=1A ;IB=0.2A ICBO Collector cut-off current VCB=750V;IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=2A ; VCE=3V fT Transit |
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SavantIC |
2SC1367 IC=0 VCEsat Collector-emitter saturation voltage IC=0.5 A;IB=0.1 A VBEsat Base-emitter saturation voltage IC=0.5 A;IB=0.1 A ICBO Collector cut-off current VCB=1000V;IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=0.2A |
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SavantIC |
SILICON POWER TRANSISTOR ter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=150V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=5V 30 20 MIN 110 5 2SC1343 SYMBOL V(B |
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SavantIC |
SILICON POWER TRANSISTOR current gain Transition frequency CONDITIONS IC=1mA; IB=0 IC=50µA; IE=0 IE=50µA; IB=0 IC=1.5A; IB=0.15A VCB=25V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=0.5A ; VCE=5V 60 MIN 25 25 5 2SC1368 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT |
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SavantIC |
SILICON POWER TRANSISTOR r-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Storage time Fall time CONDITIONS IC=100mA; |
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SavantIC |
SILICON POWER TRANSISTOR B=0.1A IC=2A; IB=0.2A VCB=40V; IE=0 VCE=20V; IC=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V 2SC1398 hFE-2 DC current gain 2SC1398A fT Transition frequency IC=0.5A ; VCE=5V IC=1A ; VCE=5V CONDITIONS 2SC1398 2SC1398A SYMBOL MIN 50 TYP. MAX UNIT V(BR)CEO Co |
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SavantIC |
SILICON POWER TRANSISTOR ise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Storage time |
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SavantIC |
SILICON POWER TRANSISTOR er cut-off current DC current gain Transition frequency CONDITIONS IC=100mA; IB=0 IE=1mA; IC=0 IC=0.5 A;IB=0.1 A IC=0.5 A;IB=0.1 A VCB=1000V;IE=0 VEB=5V; IC=0 IC=0.2A ; VCE=10V IC=0.1A ; VCE=10V 30 MIN 600 5 2SC1367 SYMBOL VCEO(SUS) V(BR)EBO VCEsat |
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SavantIC |
SILICON POWER TRANSISTOR uration voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50µA ;IE=0 IC=1mA ;IB=0 IE=50µA ;IC=0 IC=50mA ;IB=5mA VCB=300V;IE=0 VEB=7V; IC=0 IC=50mA ; VCE=10V IC=10mA ; VCE=20V 30 25 MIN 300 30 |
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SavantIC |
SILICON POWER TRANSISTOR B=0.1A IC=2A; IB=0.2A VCB=40V; IE=0 VCE=20V; IC=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V 2SC1398 hFE-2 DC current gain 2SC1398A fT Transition frequency IC=0.5A ; VCE=5V IC=1A ; VCE=5V CONDITIONS 2SC1398 2SC1398A SYMBOL MIN 50 TYP. MAX UNIT V(BR)CEO Co |
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Desde 2024. D4U Semiconductor.
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