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Silicon NPN Power Transistors |
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SavantIC |
(BU406D / BU407D) SILICON POWER TRANSISTOR Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS www.datasheet4u.com BU406D BU407D SYMBOL MIN TYP. MAX UNIT BU406D VCEO(SUS) Collector-emitter sustaining voltage BU407D IC=100mA ; IB=0 200 |
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SavantIC |
(BU406D / BU407D) SILICON POWER TRANSISTOR Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS www.datasheet4u.com BU406D BU407D SYMBOL MIN TYP. MAX UNIT BU406D VCEO(SUS) Collector-emitter sustaining voltage BU407D IC=100mA ; IB=0 200 |
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SavantIC |
SILICON POWER TRANSISTOR m Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Em |
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SILICON POWER TRANSISTOR C=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A 3 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.25A VCE=BVCES; VBE=0 TC=12 |
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SavantIC |
Silicon NPN Power Transistors |
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SavantIC |
SILICON POWER TRANSISTOR lector-emitter sustaining voltage IC=100mA ; IB=0 IC=6A; IB=1.2A IC=6A; IB=1.2A IC=2A ; VCE=5V VCE=250V; VBE=0 TC=150 VEB=6V; IC=0 IC=0.5A ; VCE=10V IC=6A ; IB=1.2A 200 V Collector-emitter saturation voltage 1.0 V Base-emitter saturation volta |
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Desde 2024. D4U Semiconductor.
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