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SavantIC |
2SB863 B=0 VCEsat Collector-emitter saturation voltage IC=-5.0A ;IB=-0.5A VBE Base-emitter on voltage IC=-5A ; VCE=-5V ICBO Collector cut-off current VCB=-140V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-5V |
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SavantIC |
SILICON POWER TRANSISTOR ion voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-3A; IB=-0.15A IC=-3A; IB=-0.15A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; |
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SavantIC |
SILICON POWER TRANSISTOR cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=-50mA; RBE=: IE=-1mA; IC=0 IC=-1 A;IB=-0.1 A VCE=-80V; RBE=: VEB=-3.5V; IC=0 IC=-0.5A ; VCE=-4V IC=-50mA ; VCE=-4V 50 25 MIN -100 -4 -1.0 -100 -50 250 350 TYP. MA |
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SavantIC |
SILICON POWER TRANSISTOR ctor cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=-50mA; RBE=: IE=-5mA; IC=0 IC=-0.5 A;IB=-50m A IC=-50mA ; VCE=-4V VCB=-120V; IE=0 IC=-50mA ; VCE=-4V IC=-0.5A ; VCE=-10V IE=0 ;VCB=-100V,f=1MHz 60 60 30 MIN -150 -6 |
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SavantIC |
SILICON POWER TRANSISTOR ff current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5.0A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A |
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SavantIC |
SILICON POWER TRANSISTOR ollector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ;IE=0 IC=-2A; IB=-0.1A IC=-2A; IB=-0.1A VCB=-100V;IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-0.5A ; VCE=-2V IC=-0.5A ; VCE=-10V 4 |
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SavantIC |
SILICON POWER TRANSISTOR tion voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-4A; IB=-0.2A IC=-4A; IB=-0.2A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; V |
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Desde 2024. D4U Semiconductor.
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