No. | parte # | Fabricante | Descripción | Hoja de Datos |
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SavantIC |
2SB761 |
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SavantIC |
2SB763 R)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A VBEsat Base-emitter saturation voltage IC=-3A ;IB=-0.3A ICBO Collector cut-off current VCB=-60V IE=0 IEBO Emitter cut-off current |
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SavantIC |
2SB761A |
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SavantIC |
SILICON POWER TRANSISTOR oltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-1A; IB=-0.1A IC=-1A; IB=-0.1A VCB=-60V; IE=0 VEB=-5 |
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SavantIC |
SILICON POWER TRANSISTOR 2SB761A VCE=-60V; VBE=0 CONDITIONS SYMBOL 2SB761 2SB761A MIN -60 TYP. MAX UNIT VCEO Collector-emitter breakdown voltage V -80 -1.2 -1.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage ICES Collector cut-off cu |
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SavantIC |
SILICON POWER TRANSISTOR 2SB761A VCE=-60V; VBE=0 CONDITIONS SYMBOL 2SB761 2SB761A MIN -60 TYP. MAX UNIT VCEO Collector-emitter breakdown voltage V -80 -1.2 -1.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage ICES Collector cut-off cu |
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SavantIC |
SILICON POWER TRANSISTOR B762A 2SB762 2SB762A VCE=-60V; VBE=0 CONDITIONS SYMBOL 2SB762 2SB762A MIN -60 TYP. MAX UNIT VCEO Collector-emitter breakdown voltage V -80 -1.5 -2.0 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage ICES Collecto |
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SavantIC |
SILICON POWER TRANSISTOR B762A 2SB762 2SB762A VCE=-60V; VBE=0 CONDITIONS SYMBOL 2SB762 2SB762A MIN -60 TYP. MAX UNIT VCEO Collector-emitter breakdown voltage V -80 -1.5 -2.0 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage ICES Collecto |
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SavantIC |
SILICON POWER TRANSISTOR age Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA ;iB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A ;IB=-0.3A IC=-3A ;IB=-0.3A VCB=-60V IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V |
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SavantIC |
SILICON POWER TRANSISTOR saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-25mA, RBE=> IE=-50mA ,IC=0 IC=-1.5A ,IB=-3mA IC=-3A ,IB=-30mA IC=-1.5A ,IB=-3mA IC=- |
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SavantIC |
SILICON POWER TRANSISTOR r saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-25mA, RBE=? IE=-50mA ,IC=0 IC=-1.5A ,IB=-3mA IC=-3A ,IB=-30mA IC=-1.5A ,IB=-3mA IC |
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