| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
SavantIC |
2SB754 . MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -50 V V(BR)EBO Emitter-base breakdown voltage IE=-10mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-4.0A; IB=-0.4A -0.2 -0.4 V VBE Base-emitter voltage I |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR reakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IE=-10mA; IC=0 IC |
|
|
|
|
SavantIC |
2SB755 kdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-0.1A; IB=0 IE=-10mA; IC=0 IC=-5 A;IB=-0.5 A IC=-5A ; V |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR oltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-4A; IB=-0.4A IC=-4A; IB=-0.4A VCB=-100V; IE=0 VEB=-5V; IC=0 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR kdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-0.1A; IB=0 IE=-10mA; IC=0 IC=-5 A;IB=-0.5 A IC=-5A ; V |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off |
|
Desde 2024. D4U Semiconductor.
|