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Savantic |
Silicon PNP Power Transistors or-emitter saturation voltage IC=-5A; IB=-0.5A VBE Base-emitter voltage ICBO Collector cut-off current IEBO Emitter cut-off current hFE DC current gain IC=-5A ; VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V fT Transition frequency IC=-1A |
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SavantIC |
2SB686 wn voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ,IB=0 IE=-10mA |
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Savantic |
Silicon PNP Power Transistors or-emitter saturation voltage IC=-5A; IB=-0.5A VBE Base-emitter voltage ICBO Collector cut-off current IEBO Emitter cut-off current hFE DC current gain IC=-5A ; VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V fT Transition frequency IC=-1A |
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SavantIC |
SILICON POWER TRANSISTOR itter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC= |
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SavantIC |
SILICON POWER TRANSISTOR Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ,IB=0 IE=-10mA ,IC=0 IC=-4A; IB=-0.4A IC=-4A ; VCE=-5V V |
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SavantIC |
SILICON POWER TRANSISTOR turation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA; RBE=< IE=-1mA; IC=0 IC=-1A;IB=-0.1 A VCE=-80V; RBE=< VEB=-3.5V; IC=0 IC=-0.5A ; VCE=-4V IC=-50mA ; VCE=-4V 50 25 MIN -100 -4 2SB6 |
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Desde 2024. D4U Semiconductor.
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