SavantIC B53 Hoja de datos

No.	parte #	Fabricante	Descripción
1	B536	SavantIC	2SB536 CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A ICBO Collector cut-off current VCB=
2	B532	SavantIC	2SB532 ase-emitter on voltage IC=-4A ; VCE=-5V ICBO Collector cut-off current VCB=-80V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-4V hFE -2 DC current gain IC=-4A ; VCE=-4V fT Transition frequency IC=-1
3	2SB531	SavantIC	SILICON POWER TRANSISTOR VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Collector-emitter breakdown voltage IC=-100mA ;IB=0 IE=-10mA ;IC=0 IC=-4A; IB=-0.4A IC=-4A ; VCE=-5V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-1A ; VCE=-5V -
4	2SB532	SavantIC	SILICON POWER TRANSISTOR A ; VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-4A ; VCE=-4V IC=-1A ; VCE=-4V -80 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -2.0 V Base-emitter on voltage -1.5 V Collector cut-off current -0
5	2SB536	SavantIC	SILICON POWER TRANSISTOR . MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -1.5 V ICBO Collector cut-off
6	2SB539	SavantIC	SILICON POWER TRANSISTOR r saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IE=-1mA ;IC=0 IC=-6A; IB=-0.6A IC=-6A ; VCE=-5V VCB=-130V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-