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SavantIC |
2SB1430 METER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-2A ; IB=-2mA IC=-2A ; IB=-2mA VCB=-100 |
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SavantIC |
2SB1470 AX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA VBEsat Base-emitter saturation voltage IC=-7A ;IB=-7mA ICBO Collector cut-off current VCB=-160V; IE=0 ICEO Collect |
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SavantIC |
SILICON POWER TRANSISTOR turation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-7A ;IB=-7mA IC=-7A ;IB=-7mA VCB=-160V; IE= |
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SavantIC |
SILICON POWER TRANSISTOR se breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage C |
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SavantIC |
SILICON POWER TRANSISTOR voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-6A ; VCE=-5V VCB=-180V; IE=0 VEB=-5V; IC=0 |
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SavantIC |
SILICON POWER TRANSISTOR down voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=< IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A ;IB=-0.3A VCB=-80V; IE=0 VEB=-4V; IC |
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SavantIC |
SILICON POWER TRANSISTOR e breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE== IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A ;IB=-0.4A VCB=-80V; IE=0 VEB= |
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SavantIC |
SILICON POWER TRANSISTOR reakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-6A ;I |
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SavantIC |
SILICON POWER TRANSISTOR Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC |
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SavantIC |
SILICON POWER TRANSISTOR e breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CO |
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SavantIC |
SILICON POWER TRANSISTOR e breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-25mA; RBE |
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SavantIC |
SILICON POWER TRANSISTOR tter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-5A; IB=-5mA IC=-5A; IB=-5mA VCB=-110V; IE=0 VEB= |
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SavantIC |
SILICON POWER TRANSISTOR ase-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-2A ; IB=-2mA IC=-2A ; IB=-2mA VCB=-100V;IE=0 VEB=-7V;IC=0 IC=-2A ; VCE=-2V IC=-4A |
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SavantIC |
SILICON POWER TRANSISTOR ation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50µA ;IE=0 IC=-1mA ;IB=0 IE=-50µA ;IC=0 IC=-4A ;IB=-0.1A VCB=-20V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V |
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SavantIC |
SILICON POWER TRANSISTOR turation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA; IB=0 IC=-0.1mA; IE=0 IE=-2mA; IC=0 IC=-5A;IB=-20m A IC=-5A;IB=-20m A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-3V 2000 MIN -100 -100 -5 2SB1478 |
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SavantIC |
SILICON POWER TRANSISTOR uration voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=-10mA; IB=0 IC=-3A ; IB=-6mA IC=-3A ; IB=-6mA VCB=-100V;IE=0 VEB=-5V;IC=0 IC=-1.5A ; VCE=-2V IC=-3A ; VCE=-2V IC=1A |
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SavantIC |
SILICON POWER TRANSISTOR voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA; IB=0 IC=-1.5A ; IB=-1.5mA IC=-1.5A ; IB=-1.5mA VCB=-100V;IE=0 VEB=-8V;IC=0 IC=-1A ; VCE=-2V IC=-2A ; VCE=-2 |
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SavantIC |
SILICON POWER TRANSISTOR oltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-8A ; VCE=-5V VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5 |
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SavantIC |
SILICON POWER TRANSISTOR tage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA; IB=0 IC=-0.1mA; IE=0 IE=-0.1mA; IC=0 IC=-3A;IB=-0.3 A IC=-3A;IB=-0.3 A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V 60 MIN -100 -100 -5 2SB1477 SYMBOL V(B |
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Desde 2024. D4U Semiconductor.
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