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SavantIC |
2SB1273 tter breakdown voltage IC=-5mA ,RBE=: -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.4 -1.0 V |
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SavantIC |
2SB1292 |
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SavantIC |
2SB1272 voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA;IB=0 IC=-1mA; IE=0 IE=-5mA;IC=0 IC=-2A; IB=-2mA IC=-2A; IB=-2mA VCB=100V; IE=0 VCE=100V; IB=0 VEB= |
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SavantIC |
SILICON POWER TRANSISTOR lector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA;IB=0 IC=-1mA; IE=0 IE=-5mA;IC=0 IC=-2A; IB=-2mA IC=-2A; IB=-2mA VCB=100V; IE=0 VCE=100V; IB=0 VEB=-7V; IC=0 IC=-1A ; VCE=-2V 1000 MIN -100 -1 |
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SavantIC |
SILICON POWER TRANSISTOR -base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-5mA; IE=0 IC=-50mA; |
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SavantIC |
SILICON POWER TRANSISTOR unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIO |
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SavantIC |
SILICON POWER TRANSISTOR ector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE== IC=-1.5A ; IB=-3mA IC |
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SavantIC |
SILICON POWER TRANSISTOR erwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequenc |
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SavantIC |
SILICON POWER TRANSISTOR Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ; IB=0 IC=-7A ;IB=-7mA IC=-7A ;IB=-7mA VCB=-160V; IE=0 VCE=-140V; IB |
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SavantIC |
SILICON POWER TRANSISTOR e Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-3A; IB=-6mA IC=-3A; IB=-6mA VCB=-100V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE |
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SavantIC |
SILICON POWER TRANSISTOR oltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5mA ,RBE=: IC=-1mA ,IE=0 IE=-1mA ,IC=0 IC=-2A |
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SavantIC |
SILICON POWER TRANSISTOR tor-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance CONDITIONS IC=-5mA; IB=0 IC=-50µA; IE=0 IC=-1A ;IB=-1mA VCB=-100V; IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-2 |
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SavantIC |
SILICON POWER TRANSISTOR PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Tran |
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SavantIC |
SILICON POWER TRANSISTOR ge Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIO |
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SavantIC |
SILICON POWER TRANSISTOR age Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITI |
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SavantIC |
SILICON POWER TRANSISTOR s otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition fre |
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SavantIC |
SILICON POWER TRANSISTOR r cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ; IB=0 IC=-6A ;IB=-6mA IC=-6A ;IB=-6mA VCB=-160V; IE=0 VCE=-140V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A |
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SavantIC |
SILICON POWER TRANSISTOR itter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-3A; IB=-6mA IC=-3A; IB=-6mA VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IE=0. |
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SavantIC |
SILICON POWER TRANSISTOR akdown voltage Collector-emitter breakdown voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output |
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SavantIC |
SILICON POWER TRANSISTOR se breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA; IB= |
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Desde 2024. D4U Semiconductor.
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