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SavantIC |
2SB1098 -3A; IB=-3mA VBEsat Base-emitter saturation voltage IC=-3A; IB=-3mA ICBO Collector cut-off current VCB=-100V ;IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-3A ; VCE=-2V hFE-2 DC current gain IC=-5A ; VCE=-2V |
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SavantIC |
2SB1018 saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A ;IB=-0.4A VCB=-100V; IE=0 V |
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SavantIC |
SILICON POWER TRANSISTOR ONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-50µA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50µA ,IC=0 -5 V VCEsat Collector-emitter sa |
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SavantIC |
2SB1022 |
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SavantIC |
2SB1024 ector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA; IB=0 IC=-3A ;IB=-6mA IC=-3A ;IB=-6mA VCB=-100V |
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SavantIC |
2SB1019 down voltage IC=-50mA; IB=0 -50 V VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -0.2 -0.4 V VBEsat Base-emitter saturation voltage IC=-4A ;IB=-0.4A -0.9 -1.2 V ICBO Collector cut-off current VCB=-70V; IE=0 -30 µA IEBO Emitt |
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SavantIC |
SILICON POWER TRANSISTOR er cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-2mA ;IB=0 IC=-50µA ;IE=0 IE=-50µA ;IC=0 IC=-0.5A ;IB=-50mA VCB=-50V; IE=0 VEB=-4V; IC=0 IC=-0.1A ; VCE=-3V IE=0; VCB=-10V;f=1MHz IE=50mA ; VCE=-10V 82 14 100 MI |
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SavantIC |
SILICON POWER TRANSISTOR ut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-3A; IB=-0.3A IC=-0.5A ;VCE=-5V VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC= |
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SavantIC |
SILICON POWER TRANSISTOR aturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-2mA ;IB=0 IC=-1mA ;IE=0 IC=-3.0A; IB=-0.3A* IC=-2.0A ;IB=-0.2A* VCB=-50V; I |
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SavantIC |
2SB1007 tage IE=-50µA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA ICBO Collector cut-off current IEBO Emitter cut-off current VCB=-50V; IE=0 VEB=-4V; IC=0 hFE DC current gain IC=-0.1A ; VCE=-3V COB Output capacitance IE=0; VC |
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SavantIC |
SILICON POWER TRANSISTOR IC=-2.0A ;IB=-0.2A VCB=-20V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-500mA ; VCE=-5V IC=-500mA ; VCE=-5V f=1MHz ; VCB=-10V -32 V Collector-emitter saturation voltage -0.8 V Base-emitter saturation voltage -2.0 V Collector cut-off current |
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SavantIC |
SILICON POWER TRANSISTOR nt DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A; VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A; VCE=-5V f=1MHz ; VCB=-10V;IE=0 40 |
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SavantIC |
SILICON POWER TRANSISTOR ter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-3A; IB=-0.3A IC=-3A ;VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A; VCE=-5V IE=0, |
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SavantIC |
SILICON POWER TRANSISTOR r saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A ;IB=-0.4A VCB=- |
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SavantIC |
SILICON POWER TRANSISTOR voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A ;IB=-0.4A VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=- |
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SavantIC |
SILICON POWER TRANSISTOR tter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-25mA; IB=0 IC=-2A ;IB=-4mA IC=-2A ;IB=-4mA VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; |
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SavantIC |
SILICON POWER TRANSISTOR tion voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-25mA ,IB=0 IC=-1mA ,IE=0 IE=-1mA ,IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE |
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SavantIC |
SILICON POWER TRANSISTOR gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-4A ;IB=-0.4A IC=-4A ; VCE=-5V VCB=-120V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 |
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SavantIC |
SILICON POWER TRANSISTOR ; VCE=-2V IC=-1A ; VCE=-2V IC=-0.5A ; VCE=-5V CONDITIONS 2SB1071 2SB1071A SYMBOL MIN -20 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -40 -0.5 -1.5 -50 -50 45 60 150 260 MHz V V µA µA VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT |
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SavantIC |
SILICON POWER TRANSISTOR ; VCE=-2V IC=-1A ; VCE=-2V IC=-0.5A ; VCE=-5V CONDITIONS 2SB1071 2SB1071A SYMBOL MIN -20 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -40 -0.5 -1.5 -50 -50 45 60 150 260 MHz V V µA µA VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT |
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Desde 2024. D4U Semiconductor.
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