SavantIC A19 Hoja de datos

No.	parte #	Fabricante	Descripción
1	A1941	SavantIC	2SA1941 sat Collector-emitter saturation voltage IC=-7 A;IB=-0.7A VBE ICBO IEBO hFE-1 Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V hFE-2 DC current
2	2SA1941	SavantIC	SILICON POWER TRANSISTOR voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-7 A;IB=-0.7A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ;
3	2SA1962	SavantIC	SILICON POWER TRANSISTOR akdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-8 A;IB=-0.8A IC=-7A ; VCE
4	A1907	SavantIC	2SA1907 in Transition frequency utput capacitance CONDITIONS IC=-50mA; IB=0 IC=-2A;IB=-0.2 A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-2A ; VCE=-4V 50 IC=-0.5A ; VCE=-12V IE=0; VCB=10V;f=1MHz 150 20 MIN -80 2SA1907 SYMBOL P V(BR)CEO VCEsat C ICBO IEBO hFE fT COB O
5	2SA1907	SavantIC	SILICON POWER TRANSISTOR pacitance CONDITIONS IC=-50mA; IB=0 IC=-2A;IB=-0.2 A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-2A ; VCE=-4V IC=-0.5A ; VCE=-12V IE=0; VCB=10V;f=1MHz 50 20 MIN -80 2SA1907 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V -0.5 -10 -10 180 V µA
6	A1909	SavantIC	2SA1909 5 A;IB=-0.5 A ICBO Collector cut-off current VCB=-140V; IE=0 IEBO Emitter cut-off current VEB=-6V; IC=0 hFE DC current gain IC=-3A ; VCE=-4V fT Transition frequency IC=-0.5A ; VCE=-12V COB Output capacitance IE=0; VCB=-10V;f=1MHz Switching
7	2SA1909	SavantIC	SILICON POWER TRANSISTOR capacitance CONDITIONS IC=-50mA; IB=0 IC=-5 A;IB=-0.5 A VCB=-140V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 50 MIN -140 2SA1909 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V -0.5 -10 -10 180 2
8	2SA1908	SavantIC	SILICON POWER TRANSISTOR capacitance CONDITIONS IC=-50mA; IB=0 IC=-3 A;IB=-0.3 A VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V IE=0; VCB=-10V;f=1MHz 50 MIN -120 2SA1908 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V -0.5 -10 -10 180 20
9	2SA1939	SavantIC	SILICON POWER TRANSISTOR oltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5 A;IB=-0.5A IC=-3A ; VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VC
10	2SA1942	SavantIC	SILICON POWER TRANSISTOR t VBE ICBO IEBO hFE-1 hFE-2 fT COB Collector-emitter breakdown voltage IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-6A ; VCE=-5V VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-1A ; VCE=-5V IE=0; f=1MHz;VCB=-10V -160 V Collector-emitt
11	2SA1986	SavantIC	SILICON POWER TRANSISTOR on voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-8 A;IB=-0.8A IC=-7A ; VCE=-5V VCB=-230V; IE=0 VEB=-5V; IC=0 IC=-1A
12	2SA1987	SavantIC	SILICON POWER TRANSISTOR ctor-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-7A ; VCE=-5V VCB=-
13	2SA1988	SavantIC	SILICON POWER TRANSISTOR r cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-200V; IE=0 VEB=-3V; IC=0 IC=-1A ; VCE=-5V IC=-3.5A ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-1A ; VCE=-5V 70 20 270
14	2SA1940	SavantIC	SILICON POWER TRANSISTOR voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-6 A;IB=-0.6A IC=-4A ; VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ;