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SavantIC |
2SA1006 rwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency SYMBOL VCEsat VBEsat ICBO IEBO hF |
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SavantIC |
2SA1043 ter breakdown voltage IC=-10mA ;IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-0.1mA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA ;IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-15A; IB=-1.5A -1.5 V |
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SavantIC |
SILICON POWER TRANSISTOR IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCE=-10V; IB=0 VCB=-20V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IE=0 ; VCB=-20V,f=1MHz CONDITIONS 2SA1096 2SA1096A SYMBOL MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -60 -70 -1.0 |
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SavantIC |
Silicon POwer Transistors rwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency SYMBOL VCEsat VBEsat ICBO IEBO hF |
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SavantIC |
Silicon POwer Transistors llector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-5.0A ,IB=-0.5A,L=1mH IC=-5A; IB=- |
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SavantIC |
Silicon POwer Transistors at VBEsat ICBO IEBO hFE COB fT Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-0.1mA ;IE=0 IE=-0.1mA ;IC=0 IC=-7A; IB=-0.7A IC=-7A; IB=-0.7A VCB=-120V; IE=0 VEB=-7V; IC=0 IC=-1.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-1A ; VCE=-10V -120 V |
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SavantIC |
Silicon POwer Transistors ter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-4A ;IB=-0.4A IC=-4A;VCE=-5V VCB=-100V; IE=0 VEB=-3V; IC=0 IC=-0.2A ; VCE=-5V IC=-1A ; |
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SavantIC |
SILICON POWER TRANSISTOR IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCE=-10V; IB=0 VCB=-20V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IE=0 ; VCB=-20V,f=1MHz CONDITIONS 2SA1096 2SA1096A SYMBOL MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -60 -70 -1.0 |
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SavantIC |
2SA1008 S Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1. |
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SavantIC |
2SA1075 s otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage 2SA1075 2SA1076 IC=-1mA ;RBE=< V(BR)CBO Collector-base breakdown voltage 2SA1075 2SA1076 IC=-50µA; IE=0 V(BR)EBO Emitter-base breakdown voltage |
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SavantIC |
2SA1062 at Collector-emitter saturation voltage IC=-5A ;IB=-0.5A VBE Base-emitter on voltage IC=-5A;VCE=-5V ICBO Collector cut-off current VCB=-120V; IE=0 IEBO Emitter cut-off current VEB=-3V; IC=0 hFE-1 DC current gain IC=-20mA ; VCE=-5V hFE-2 DC |
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SavantIC |
2SA1050 V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-8A; IB=-0.8A VBE Base-emitter on voltage IC=-6A ; VCE=-5V ICBO Collector cut-off current VCB=-140V; IE=0 IEBO Emitter cut-off current VEB= |
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SavantIC |
Silicon POwer Transistors rwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency SYMBOL VCEsat VBEsat ICBO IEBO hF |
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SavantIC |
Silicon POwer Transistors rwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency SYMBOL VCEsat VBEsat ICBO IEBO hF |
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SavantIC |
Silicon POwer Transistors at VBEsat ICBO IEBO hFE COB fT Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-0.1mA ;IE=0 IE=-0.1mA ;IC=0 IC=-15A; IB=-1.5A IC=-15A; IB=-1.5A VCB=-120V; IE=0 VEB=-7V; IC=0 IC=-3A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-2A ; VCE=-10V -120 V |
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SavantIC |
Silicon POwer Transistors VBEsat ICBO IEBO hFE COB fT Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-0.1mA ;IE=0 IE=-0.1mA ;IC=0 IC=-15A; IB=-1.5A IC=-15A; IB=-1.5A VCB=-70V; IE=0 VEB=-7V; IC=0 IC=-3A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-2A ; VCE=-10V -70 V Co |
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SavantIC |
Silicon POwer Transistors E-1 hFE-2 fT Collector-emitter breakdown voltage IC=-25mA ;IB=0 IC=-4A ;IB=-0.4A IC=-4A;VCE=-5V VCB=-150V; IE=0 VEB=-3V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-0.5A ; VCE=-5V -150 V Collector-emitter saturation voltage -2.0 V Base-emitter |
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SavantIC |
Silicon POwer Transistors er saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.1A ;IB=0 IC=-8A ;IB=-0.8A IC=-8A;VCE=-5V VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=- |
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SavantIC |
(2SA1075 / 2SA1076) SILICON POWER TRANSISTOR s otherwise specified PARAMETER Collector-emitter breakdown voltage 2SA1075 IC=-1mA ;RBE=< 2SA1076 2SA1075 IC=-50µA; IE=0 2SA1076 IE=-50µA; IC=0 IC=-5A;IB=-0.5A IC=-5A;VCE=-5V 2SA1075 ICBO Collector cut-off current 2SA1076 2SA1075 ICEO Collector cut- |
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SavantIC |
SILICON POWER TRANSISTOR e Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIO |
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Desde 2024. D4U Semiconductor.
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