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Silicon NPN Power Transistors 2N5294 VCEO(SUS) Collector-emitter sustaining voltage 2N5296 2N5298 2N5294 VCEsat Collector-emitter saturation voltage 2N5296 2N5298 2N5294 VBE Base-emitter on voltage 2N5296 2N5298 2N5294/5298 ICEV Collector cut-off current 2N5296 ICER Collector cut |
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SavantIC |
(2N5737 / 2N5738) Silicon PNP Power Transistors TICS Tj=25 unless otherwise specified PARAMETER 2N5737 VCEO(SUS) Collector-emitter sustaining voltage 2N5738 VCEsat-1 VCEsat-2 VBEsat VBE ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emi |
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Savantic |
Silicon PNP Power Transistors 3 2N5884 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage 2N5883 2N5884 IC=-0.2A ;IB=0 -60 -80 V VCEsat-1 Collector-emitter saturation voltage IC |
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SavantIC |
Silicon NPN Power Transistors pecified PARAMETER 2N5671 IC=0.2A ;IB=0 2N5672 IC=15A; IB=1.2A IC=15A ;IB=1.2A IC=15A ; VCE=5V VCE=80V; IB=0 2N5671 Collector cut-off current 2N5672 2N5671 2N5672 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Trainsistio |
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SavantIC |
(2N5875 / 2N5876) Silicon PNP Power Transistor wer Transistors 2N5875 2N5876 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5875 IC=-0.2A ;IB=0 2N5876 IC=-5A;IB=-0.5A IC=-10A;IB=-2.5A IC=-10A;IB=-2.5A IC=-4A ; VCE=-4V VCB=ratedVCBO; IB=0 2N5875 ICEO Collector cut-off current 2N587 |
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Savantic |
Silicon PNP Power Transistors 3 2N5884 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage 2N5883 2N5884 IC=-0.2A ;IB=0 -60 -80 V VCEsat-1 Collector-emitter saturation voltage IC |
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SavantIC |
(2N5655 - 2N5657) Silicon NPN Power Transistors duct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5655 VCEO(SUS) Collector-emitter sustaining voltage 2N5656 2N5657 VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Colle |
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SavantIC |
Silicon NPN Power Transistors L TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 80 V VCEsat-1 Collector-emitter saturation voltage IC=10 A;IB=1 A 1.4 V VCEsat-2 Collector-emitter saturation voltage IC=20 A;IB=4 A 4.0 V VBE Base-emitt |
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SavantIC |
(2N5758 - 2N5760) Silicon NPN Power Transistors .DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5758 VCEO(SUS) Collector-emitter sustaining voltage 2N5759 2N5760 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation v |
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SavantIC |
(2N5867 / 2N5868) Silicon PNP Power Transistor VCEO(SUS) Collector-emitter sustaining voltage 2N5868 VCEsat VBEsat ICBO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current 2N5867 ICEO Collector cut-off current 2N5868 IEBO hFE fT Emitter cut-off current |
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SavantIC |
(2N5869 / 2N5870) Silicon NPN Power Transistor 1A ;IB=0 2N5870 IC=5A;IB=1A IC=5A; IB=1A VCB=ratedVCBO; IB=0 2N5869 ICEO Collector cut-off current 2N5870 IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency VCE=40V; IB=0 VEB=5V; IC=0 IC=1.5A ; VCE=4V IC=0.5A ; VCE=10V;f=1MHz |
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SavantIC |
(2N5877 / 2N5878) Silicon NPN Power Transistor sistors 2N5877 2N5878 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5877 IC=0.2A ;IB=0 2N5878 IC=5A;IB=0.5A IC=10A;IB=2.5A IC=10A;IB=2.5A IC=4A ; VCE=4V VCB=ratedVCBO; IB=0 2N5877 2N5878 VCE=30V; IB=0 1.0 VCE=40V; IB=0 VCE=ratedVCE; |
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SavantIC |
Silicon NPN Power Transistors UNIT VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT Collector-emitter sustaining voltage IC=0.1A ; IB=0 IC=3A; IB=0.5A IC=3A; IB=0.5A VCB=700V; IE=0 TC=125 VCE=500V; IB=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V;f=5.0MHz 500 V Collector-emi |
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SavantIC |
(2N5190 - 2N5192) Silicon NPN Power Transistors er Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5190 VCEO(SUS) Collector-emitter sustaining voltage 2N5191 2N5192 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter |
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SavantIC |
Silicon NPN Power Transistors Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5428 IC=50mA ; IB=0 2N5430 IC=2A ;IB=0.2A IC=7A I;B=0.7A IC=2A ;IB=0.2A IC=7A I;B=0.7A VCE=75V;VBE(off)=1.5V TC=150 VCE=90V;VBE(off)=1.5V TC=150 VCB=Rated VCBO;IE=0 VEB=6V; IC= |
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SavantIC |
Silicon PNP Power Transistors licon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5597 VCEO(SUS) Collector-emitter sustaining voltage 2N5599/5601 2N5603 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Col |
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SavantIC |
(2N5598 - 2N5604) Silicon NPN Power Transistors N Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5598 VCEO(SUS) Collector-emitter sustaining voltage 2N5600/5602 2N5604 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector c |
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SavantIC |
(2N5605 - 2N5611) Silicon PNP Power Transistors er Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5605 VCEO(SUS) Collector-emitter sustaining voltage 2N5607/5609 2N5611 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-of |
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Silicon PNP Power Transistors |
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(2N5629 / 2N5630) Silicon NPN Power Transistors STICS Tj=25 unless otherwise specified PARAMETER 2N5629 IC=0.2A ;IB=0 2N5630 IC=10A; IB=1A IC=16A ;IB=4A IC=10A; IB=1A IC=8A ; VCE=2V VCB=ratedVCBO; IE=0 2N5629 2N5630 VCE=50V; IB=0 1.0 VCE=60V; IB=0 VCE=ratedVCB; VBE(off)=1.5V TC=150 VEB=7V; IC=0 2N |
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Desde 2024. D4U Semiconductor.
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