| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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SavantIC |
SILICON POWER TRANSISTOR tter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A;IB=0.5 A IC=5A ; VCE=5V VCB=150V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC |
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SavantIC |
SILICON POWER TRANSISTOR t gain DC current gain Transition frequency Output capacitance Fall time CONDITIONS IC=10mA , IB=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=800V; IE=0 VEB=5V; IC=0 IC=10mA ; VCE=5V IC=0.5A ; VCE=5V IE=-0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IC=0.5A; IB1=- |
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SavantIC |
2SD844 |
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SavantIC |
SILICON POWER TRANSISTOR n voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA |
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SavantIC |
SILICON POWER TRANSISTOR unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off c |
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SavantIC |
SILICON POWER TRANSISTOR IB=0 IE=10mA; IC=0 IC=3 A;IB=1A IC=3 A;IB=1A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 hFE-1 hFE-2 tf ts DC current gain DC current gain Fall time IC=3 A;IBend=1A;LB=20µH Storage time 13 IC=0.5A ; VCE=5V IC=3A ; VCE=10V 8 4 MIN 600 |
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Savant IC |
2SD845 er saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A;IB=0.5 A IC=5A ; VCE=5V VCB=150V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1 |
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Desde 2024. D4U Semiconductor.
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