| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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SanyoSemiconDevice |
SVPseries 00kHz) 200 180 160 140 120 100 80 60 40 20 0 10000 Leakage current (20V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. V.P.S test conditions : 230deg.C×75s×2times (V.P.S=Vapor Phase S |
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SanyoSemiconDevice |
OS-CONSVPseries 0kHz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (20V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test conditions : |
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SanyoSemiconDevice |
SVPseries 200 180 160 140 120 100 80 60 40 20 0 10000 Leakage current (20V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test conditions : 2 |
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SanyoSemiconDevice |
OS-CON20SVP68M kHz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (20V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test conditions : 2 |
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Desde 2024. D4U Semiconductor.
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