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Sanyo |
NPN Transistor High breakdown voltage and high reliability. Fast switching speed. • Wide ASO. • Adoption of MBIT process. www.DataSheet4U.com • • Package Dimensions unit : mm 2010C [TT2194] 10.2 3.6 5.1 2.7 6.3 4.5 1.3 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 S |
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Sanyo Semicon Device |
NPN Transistor • • • • • Package Dimensions unit : mm 2174A [TT2142] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20 |
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Sanyo |
NPN Transistor • • • • Package Dimensions unit : mm 2022A [TT2148] 3.5 15.6 14.0 3.2 4.8 2.0 High breakdown voltage and high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. 2.6 1.6 2.0 1.3 20.0 1.2 15.0 20.0 0.6 1.0 1 0.6 2 3 1 : Ba |
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Sanyo Semiconductor Corporation |
NPN Transistor • • • • • Package Dimensions unit : mm 2174 [TT2050] 16.0 5.0 High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 0. |
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Sanyo Semicon Device |
NPN Transistor |
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Sanyo Electric |
NPN Transistor • • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. |
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Sanyo Semiconductor Corporation |
NPN Transistor • • • • Package Dimensions unit : mm 2174 [TT2054] 16.0 5.0 High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 0.7 20.4 0.9 1 2 5.45 |
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Sanyo |
NPN Transistor • • • • • Package Dimensions unit : mm 2079D [TT2170LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 |
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Sanyo |
NPN Transistor • • • • • Package Dimensions unit : mm 2079D [TT2190LS] 10.0 3.2 3.5 7.2 4.5 2.8 High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 16.1 16.0 3.6 0.9 1.2 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. |
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Sanyo Semicon Device |
NPN Transistor • • • • • Package Dimensions unit : mm 2079D [TT2138LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 16.1 16.0 3.6 0.9 1 |
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Sanyo Semicon Device |
NPN Transistor • • • NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage (VCBO≥1400V). Ultrahigh-speed switching. Wide ASO. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. |
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Sanyo |
NPN triple diffusion planar silicon transistor |
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Desde 2024. D4U Semiconductor.
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