| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semiconductor |
2SD2646 High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process. •t 4 Adoption • • Package Dimensions unit : mm 2174A [2SD2646] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20 |
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Sanyo Semiconductor |
2SD2645 High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataSheet4U.com • Adoption of MBIT process. • On-chip damper diode. • • Package Dimensions unit : mm 2174A [2SD2645] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 21.0 |
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Desde 2024. D4U Semiconductor.
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