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Sanyo Semiconductor Corporation |
2SD1879 · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semiconductor |
2SD1817 · High DC current gain. · Small and slim package permitting the 2SD1817applied sets to be made more compact. 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 unit:mm 2044B [ |
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Sanyo Semiconductor Corporation |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collecto |
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Sanyo Semiconductor Corporation |
2SD1816 · Low collector-to-emitter saturation voltage. · Good linearity of hFE. · Small and slim package facilitating compactness of sets. · High fT. · Fast switching time. 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SB1216/ |
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Sanyo Semiconductor |
SVPD Series Capacitors ess than an initial standard 125°C, 2,000h, Rated tanδ Endurance 2 times or less than an initial standard voltage applied ESR Leakage current Below an initial standard Within ±20% ∆C/C 85°C, 85 to 90% RH, 2 times or less than an initial standard tanδ |
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Sanyo Semiconductor Corporation |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collecto |
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Sanyo Semiconductor Corporation |
2SD1801 · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Package Dimensions u |
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Sanyo Semiconductor Corporation |
2SD1835 · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. ( ) : 2SB1229 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to |
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Sanyo Semiconductor Corporation |
2SD1802 · Adoption of FBET, MBIT processes. · Large currrent capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller. 1 : Base 2 : Collect |
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Sanyo Semiconductor Corporation |
2SD1853 · High DC current gain. · Low saturation voltage. w w w . D a t a S h e e t 4 U . c o m 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collec |
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Sanyo Semiconductor Corporation |
2SD1841 · Large current capacity and wide ASO. · Low saturation voltage. ( ) : 2SB1231 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage |
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Sanyo Semiconductor Corporation |
NPN Transistor · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collecto |
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Desde 2024. D4U Semiconductor.
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