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Sanyo Semiconductor Corporation |
2SD438 |
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Sanyo Semiconductor Corporation |
2SC3552 · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3552] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-B |
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Sanyo Semiconductor Corporation |
2SC4458 · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. www.DataSheet4U.com · Micaless package facilitating mounting. Package Dimensions unit:mm 2039D [2SC4458] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 |
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Sanyo Semiconductor Corporation |
1-Channel Class AB Audio Power Amplifier • Series of pin compatible power amplifiers ranging from 45W to 180W (10%/1kHz) devices. The same printed circuit board can be used depending on the output power grade. • Miniature packages — 30W to 40W (THD=0.4%, f=20Hz to 20kHz); 44.0mm × 25.6mm × |
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Sanyo Semiconductor Corporation |
2SC5299 · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5299] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications |
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Sanyo Semiconductor Corporation |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage, high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4161] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18 |
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Sanyo Semiconductor Corporation |
af Power Amplifier • Series of pin compatible power amplifiers ranging from 20 W × 3 channels to 60 W × 3 channels (10%/1 kHz) devices. The same printed circuit board can be used depending on the output power grade. • The pin arrangement is compatible with that of the |
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Sanyo Semiconductor Corporation |
2SC2314 |
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Sanyo Semiconductor Corporation |
2SC5698 High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process. •t 4 Adoption • On-chip damper diode. • • Package Dimensions unit : mm 2174A [2SC5698] 16.0 5.0 3.4 5.6 3.1 8.0 22 |
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Sanyo Semiconductor Corporation |
2SD863 =( –)2V, IC=( –)50mA VCE=( –)2V, IC=( –)1A VCE=( –)10V, IC=( –)50mA VCB=( –)10V, f=1MHz IC=( –)500mA, IB=( –)50mA IC=( –)500mA, IB=( –)50mA 60* 30 150 (20) 12 ( –0.2) 0.15 ( –)0.85 ( –0.7) 0.5 ( –)1.2 MHz pF pF V V V Conditions Ratings min typ max ( –)1 ( –)1 320* Un |
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Sanyo Semiconductor Corporation |
Three-Channel Class AB Audio Power Amplifier • Series of pin compatible power amplifiers ranging from 20 W × 3 channels to 60 W × 3 channels (10%/1 kHz) devices. The same printed circuit board can be used depending on the output power grade. • The pin arrangement is compatible with that of the |
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Sanyo Semiconductor Corporation |
5.5W |
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Sanyo Semiconductor Corporation |
2SK2043 · Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in (trr=100ns). · Micaless package facilitating easy mounting. www.DataSheet4U.com Package Dimensions unit:mm 2078B [2SK2043] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 |
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Sanyo Semiconductor Corporation |
2SD1879 · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semiconductor Corporation |
One-Channel Class AB Audio Power Amplifier IC 5.6 Package Dimensions unit: mm 4201-SIP13 [STK404-130] 59.2 52.0 • Series of pin compatible power amplifiers ranging from 45 W to 180 W (10%/1 kHz) devices. The same printed circuit board can be used depending on the output power grade. • Miniatu |
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Sanyo Semiconductor Corporation |
NPN Epitaxial Planar Silicon Transistor • • Package Dimensions • • Low noise : NF=1.3dB typ (f=2GHz). unit : mm High cutoff frequency : fT=8.5GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). 0.3 3 [2SC5666] 0.75 0.6 0.4 |
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Sanyo Semiconductor Corporation |
2SC4204 · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Large current capacity (IC=0.7A). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifica |
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Sanyo Semiconductor Corporation |
NPN Transistor • • • • • Package Dimensions unit : mm 2174 [TT2050] 16.0 5.0 High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 0. |
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Sanyo Semiconductor Corporation |
2SC2344 D 60 to 120 Symbol ICBO IEBO hFE fT Cob VBE E 100 to 200 Conditions VCB=( –)120V, IE=0 VEB=( –)4V, IC=0 VCE=( –)5V, IC=( –)300mA VCE=( –)10V, IC=( –)50mA VCB=( –)10V, f=1MHz VCE=( –)5V, IC=( –)10mA Ratings min typ max ( –)10 ( –)10 60* 100 (30) 23 ( –)1.5 200 |
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Sanyo Semiconductor Corporation |
LA6458DS |
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Desde 2024. D4U Semiconductor.
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