| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semiconductor Corporation |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage, high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4161] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18 |
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Sanyo Semiconductor |
2SC4108 · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2022A [2SC4108] 2.6 3.5 15.6 14.0 3.2 4.8 2.0 1.6 1.3 1.2 15.0 20.0 2.0 20.0 1.4 0 |
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Sanyo Semiconductor |
2SC4109 · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC4109] 2.6 3.5 15.6 14.0 3.2 4.8 2.0 1.6 1.3 1.2 15.0 20.0 2.0 20.0 1.4 0.6 1.0 1 0.6 2 3 1. |
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Sanyo Semiconductor Corporation |
2SC4125 |
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Desde 2024. D4U Semiconductor.
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