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Sanyo Semiconductor Corporation |
2SC3552 · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3552] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-B |
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Sanyo Semiconductor Corporation |
2SC4458 · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. www.DataSheet4U.com · Micaless package facilitating mounting. Package Dimensions unit:mm 2039D [2SC4458] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 |
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Sanyo Semiconductor Corporation |
2SC5299 · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5299] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications |
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Sanyo Semiconductor Corporation |
2SC2314 |
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Sanyo Semiconductor Corporation |
2SC5698 High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataShee U . c o m of MBIT process. •t 4 Adoption • On-chip damper diode. • • Package Dimensions unit : mm 2174A [2SC5698] 16.0 5.0 3.4 5.6 3.1 8.0 22 |
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Sanyo Semiconductor |
2SC4572 · High breakdown voltage. · Small Cob. · High reliability (Adoption of HVP process). www.DataSheet4U.com 3.6 Package Dimensions unit:mm 2010C [2SC4572] 10.2 5.1 2.7 6.3 4.5 1.3 18.0 5.6 1.2 14.0 15.1 0.8 0.4 1 2 3 2.7 Specifications Absol |
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Sanyo Semiconductor Corporation |
2SC2344 D 60 to 120 Symbol ICBO IEBO hFE fT Cob VBE E 100 to 200 Conditions VCB=( –)120V, IE=0 VEB=( –)4V, IC=0 VCE=( –)5V, IC=( –)300mA VCE=( –)10V, IC=( –)50mA VCB=( –)10V, f=1MHz VCE=( –)5V, IC=( –)10mA Ratings min typ max ( –)10 ( –)10 60* 100 (30) 23 ( –)1.5 200 |
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Sanyo Semiconductor |
2SC4108 · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2022A [2SC4108] 2.6 3.5 15.6 14.0 3.2 4.8 2.0 1.6 1.3 1.2 15.0 20.0 2.0 20.0 1.4 0 |
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Sanyo Semiconductor Corporation |
NPN Epitaxial Planar Silicon Transistor • • Package Dimensions • • Low noise : NF=1.3dB typ (f=2GHz). unit : mm High cutoff frequency : fT=8.5GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). 0.3 3 [2SC5666] 0.75 0.6 0.4 |
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Sanyo Semiconductor Corporation |
2SC4204 · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Large current capacity (IC=0.7A). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifica |
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Sanyo Semiconductor |
2SC4109 · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC4109] 2.6 3.5 15.6 14.0 3.2 4.8 2.0 1.6 1.3 1.2 15.0 20.0 2.0 20.0 1.4 0.6 1.0 1 0.6 2 3 1. |
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Sanyo Semiconductor Corporation |
2SC3070 · High DC current gain (hFE=800 to 3200). · Large current capacity (IC=1.2A). · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO≥15V). EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Col |
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Sanyo Semiconductor Corporation |
2SC3748 · Low saturation voltage. · Excellent dependence of hFE on current. · Fast switching speed. · Micaless package facilitating mountig. 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-220ML ( ) : 2SA1471 Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semiconductor Corporation |
2SC5915 • • • • • 1.5max 8.8 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD 2.55 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Vol |
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Sanyo Semiconductor Corporation |
2SC3486 |
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Sanyo Semiconductor |
2SC3383 · Adoption of FBET process. · AF amp. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Package Dimensions unit:mm 2003A [2SA1392/2SC3383] ( ) : 2SA1392 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo Semiconductor Corporation |
2SC4027 · Adoption of FBET, MBIT processes. · High voltage and large current capacity. · Fast switching time. · Small and slim package permitting 2SA1522/ 2SC4027-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1552/2SC4027] 6 |
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Sanyo Semiconductor Corporation |
2SC3451 · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3451] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-B |
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Sanyo Semiconductor |
2SC3995 · High speed (tf=100ns typ). · High reliability (adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3995] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo Semiconductor Corporation |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2048B [2SC5968] 6.0 High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process. 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications A |
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Desde 2024. D4U Semiconductor.
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