Sanyo Semicon Device VP3 Hoja de datos

No.	parte #	Fabricante	Descripción
1	VP301	Sanyo Semicon Device	Ultrahigh Resolution CRT Display Video Output Amplifier
2	16SVP330M	Sanyo Semicon Device	SVP series 0kHz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. V.P.S test conditions : 230deg.C×75s×2times (V.P.S = Vapor Phase Solde
3	OS-CON10SVP33M	Sanyo Semicon Device	SVP series 00 180 160 140 120 100 80 60 40 20 0 10000 Leakage current (10V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test conditions : 23
4	OS-CON16SVP330M	Sanyo Semicon Device	SVP series 0kHz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. V.P.S test conditions : 230deg.C×75s×2times (V.P.S = Vapor Phase Solde
5	OS-CON25SVP33M	Sanyo Semicon Device	OSCON SVP SERIES Hz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (25V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. V.P.S test conditions : 230deg.C×75s×2times (V.P.S = Vapor Phase Solderi