| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em |
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Desde 2024. D4U Semiconductor.
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