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Sanyo Semicon Device |
NPN Transistor • • • • • Package Dimensions unit : mm 2174A [TT2142] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20 |
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Sanyo Semicon Device |
NPN Transistor |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. |
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Sanyo Semicon Device |
NPN Transistor • • • • • Package Dimensions unit : mm 2079D [TT2138LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 16.1 16.0 3.6 0.9 1 |
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Sanyo Semicon Device |
NPN Transistor • • • NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage (VCBO≥1400V). Ultrahigh-speed switching. Wide ASO. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. |
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Desde 2024. D4U Semiconductor.
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